Transport properties of SINIS junctions with high-current density

Born, F.; Cassel, D.; Ilin, K.; Клушин, А.М.; Siegel, M.; Brinkman, Alexander; Golubov, Alexandre Avraamovitch; Kupriyanov, M. Yu.; Rogalla, Horst

doi:10.1109/tasc.2003.814160

Cited by 11 publications

(6 citation statements)

References 14 publications

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“…Unfortunately, due to difference in Al growth over Nb and AlO x surfaces, the implementation of equal barriers in Nb/AlO x /Al/AlO x /Nb structure appears to be an intractable task with an increase of the barriers' transparency [23,24]. The structure asymmetry leads to localization of the weak link at one of the barriers that cancelled all the benefits, making this approach impractical for scaling [24].…”

Section: Scalability Of Josephson Junctionsmentioning

confidence: 99%

Miniaturization of Josephson Junctions for Digital Superconducting Circuits

et al. 2021

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In this work, we briefly overview various options for Josephson junctions, which should be scalable down to nanometer range for utilization in nanoscale digital superconducting technology. Such junctions should possess high values of critical current, I c , and normal state resistance, R N . Another requirement is the high reproducibility of the junction parameters across a wafer in a fabrication process. We argue that superconductor-normal metal-superconductor (SN -N -NS) Josephson junction of "variable thickness bridge" geometry is a promising choice to meet these requirements. Theoretical analysis of the SN -N -NS junction is performed in the case where the distance between the S electrodes is comparable to the coherence length of the N material. The restriction on the junction geometrical parameters providing the existence of superconductivity in the S electrodes is derived for the current flowing through the junction of an order of I c . The junction heating, as well as available mechanisms for the heat removal, is analyzed. The obtained results show that a SN -N -NS junction with a high (submillivolt) value of I c R N product can be fabricated from a broadly utilized combination of materials like Nb/Cu using well-established technological processes. The junction area can be scaled down to that of semiconductor transistors fabricated in the frame of a 40-nm process.

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Section: Scalability Of Josephson Junctionsmentioning

confidence: 99%

Miniaturization of Josephson Junctions for Digital Superconducting Circuits

et al. 2021

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“…The detailed comparison with the current-voltage characteristics and resistively and capacitively shunted junction (RCSJ) model have been reported in another paper [14], in which the characteristics were well fitted by the models without hysteresis and any excess current. Although our junctions configuration was SNIS sandwich-type junction, the junction successfully showed the non-hysteretic characteristics such as those of Nb-based SINIS junctions [11], [12]. In our paper for the fabrication of SIS junctions [16], we reported that additive insulator layers, such as BN or MgO, in addition to deposited AlN, formed between lower and upper thin films.…”

Section: Resultsmentioning

confidence: 83%

“…Therefore, the configuration of multilayered Josephson junctions with over-damped characteristics is also thought to be promising. In fact, over-damped junctions with a SINIS multilayered structure have already Manuscript been reported in Nb superconducting materials [11], [12]. The interlayer behaviors in SINIS junctions have already been analyzed by a microscopic model [13], in which they showed that the SINIS structures combine advantages of weak links and tunnel junctions, namely they are intrinsically shunted and have therefore non-hysteretic current-voltage characteristics.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Over-Damped Josephson Junctions With ${\rm MgB}_{2}/{\rm Al/AlN/MgB}_{2}$ Structures

Shimakage

Wang

2009

IEEE Trans. Appl. Supercond.

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MgB 2 Al AlN MgB 2 Josephson junctions were fabricated on c-plane sapphire substrates. The current-voltage characteristics of the junctions were over-damped characteristics without any excess current. The critical current was ideally modulated by applying an external magnetic field. By the evaluation of the junction uniformity of 11-and 101-arrayed junctions, 1 values of 7.9% and 10.2% were obtained. For parallel junctions, clear current modulations were observed on applying a magnetic field.

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“…These SINIS junctions feature J c 1 kA/cm 2 , V c as high as more than 250 V at 4.2 K with junction size 100-1000 m 2 [31]. SINIS junctions with various values of Al thickness and AlO x barrier transparency have been reported, but, even if feature J c and V c higher than those given above, their IV characteristic was rather anomalous showing an high residual hysteresis at 4.2 K, and they were hardly reproducible [32,33].…”

Section: Programmable Voltage Standardsmentioning

confidence: 90%

Perspectives of Overdamped Josephson Junctions in Voltage Standard Applications

Lacquaniti¹,

Leo²,

Fretto³

et al. 2010

TOSUPERJ

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We discuss the main characteristics that must be satisfied by Josephson junctions for metrological applications and, specifically, in the development of voltage standards of new generation. Data reported in the literature for the most established technologies, like SNS (Superconductor-Normal conductor-Superconductor), SINIS (Superconductor-Insulator-Normal conductor-Insulator-Superconductor) and others, are analyzed and compared. The properties of Nb/Al-AlO x /Nb overdamped SNIS (Superconductor-Normal conductor-Insulator-Superconductor) Josephson junctions developed at INRiM are also presented, since these junctions can optimize crucial parameters such as the current density and the characteristic voltage. Operation at temperatures above 4.2 K is also discussed, in view of using cryocooler setups to replace liquid helium refrigeration systems.

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Transport properties of SINIS junctions with high-current density

Cited by 11 publications

References 14 publications

Miniaturization of Josephson Junctions for Digital Superconducting Circuits

Miniaturization of Josephson Junctions for Digital Superconducting Circuits

Fabrication of Over-Damped Josephson Junctions With ${\rm MgB}_{2}/{\rm Al/AlN/MgB}_{2}$ Structures

Perspectives of Overdamped Josephson Junctions in Voltage Standard Applications

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