Transport properties of sputtered Fe/Si multilayers

Tong, Liuniu; Pan, Minhu; Wu, Xiuqiang; Lu, M.; Zhai, Hongru

doi:10.1016/s0304-8853(98)00637-4

Cited by 2 publications

(5 citation statements)

References 7 publications

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“…This is in quite a good agreement with the experimental findings, which lie between 0.1 ͑Ref. 6͒ and 2.2%, 13,14 depending on the preparation technique, the substrate, and the structure of the sample. In comparing these results one should keep in mind that most of the experimental results were obtained for systems grown in the ͓110͔ ͑Ref.…”

Section: B Perpendicular Electric Transportsupporting

confidence: 89%

Interlayer exchange coupling and perpendicular electric transport in Fe/Si/Fe trilayers

Herper¹,

Weinberger²,

Szunyogh

et al. 2002

Phys. Rev. B

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The interlayer exchange coupling and the perpendicular magnetoresistance of Fe/Si/Fe systems have been investigated within the fully relativistic screened Korringa-Kohn-Rostoker method and the Kubo-Greenwood equation considering interdiffusion effects, i.e., inhomogeneous Fe-Si alloy formation at the interfaces. It is shown that the experimentally observed strong antiferromagnetic interlayer exchange coupling is caused by the formation of Fe-Si alloys at the interface. Furthermore, our calculations give evidence that the small magnetoresistance, which has been observed experimentally in Fe/Si/Fe trilayers has a similar origin. The results presented here give no evidence for a direct connection between the magnetoresistance and interlayer exchange coupling in Fe/Si/Fe systems.

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Section: B Perpendicular Electric Transportsupporting

confidence: 89%

Interlayer exchange coupling and perpendicular electric transport in Fe/Si/Fe trilayers

Herper¹,

Weinberger²,

Szunyogh

et al. 2002

Phys. Rev. B

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show abstract

“…This means if realistic interdi¤usion concentrations are considered the ab initio determined MR is rather small (¼ 2 %), which agrees well with the experimental data, which lie in turn between 0:1 [Inomata et al (1995)] and 2:2 % [Tong et al (1999); Highmore et al (1995)]. The spread of the experimental MRs is due to di¤erent preparation techniques, substrates and structure of the sample.…”

Section: Perpendicular Electric Transportsupporting

confidence: 76%

“…After 24 ML the MR still decreases with growing number of Si layers. It is obvious, however, that a reasonably large MR remains even for thick spacers, which is in disagreement with the known experimental …ndings [Tong et al (1999); Ihara et al (1999);Inomata et al (1995)]. It is suggested that the origin of this discrepancy is similar to what has been discussed in the case of the IEC.…”

Section: Perpendicular Electric Transportcontrasting

confidence: 54%

“…All MR ratios of Fe/Si multilayers or trilayers determined experimentally are rather small as compared to systems with metallic spacers [Mosca et al (1991); Parkin et al (1990) [Miyazaki and Tezuka (1995)]. Independent of the substrate which determines the growth direction the MR in Fe/Si systems ranges between 0.3 and 2:2 % [Highmore et al (1995); Tong et al (1999); Ihara et al (1999)]. At room temperature also negative values of the MR have been found [Inomata et al (1995); Ihara et al (1999)].…”

Section: Introductionmentioning

confidence: 80%

“…The spread of the experimental MRs is due to di¤erent preparation techniques, substrates and structure of the sample. It should be mentioned that in experiments often SiO 2 substrates are used, on which the Fe/Si/Fe systems grow in (110) direction [Inomata et al (1995);Tong et al (1999)]. In here, the trilayers are oriented in (100) direction.…”

Section: Perpendicular Electric Transportmentioning

confidence: 99%

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Ab Initio Study of Electric Transport and Interlayer Exchange Coupling in Fe-Si-Fe Systems

Herper¹,

Weinberger²,

Szunyogh

et al. 2003

Phase Transitions

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We present a …rst principles study of the magnetoresistance (MR) perpendicular to the planes of atoms and the interlayer exchange coupling (IEC) in Fe/Si/Fe trilayers. In both cases the dependence on the number of spacer layers is investigated, whereby the spacer thickness ranges between 3 and 21 Å for the IEC and extends to 33 Å for the MR in order to obtain the asymptotic behavior. Additionally, the in‡uence of alloy formation at the interfaces on the MR and the IEC is examined. The calculations of the electronic structure are performed ¤ Corresponding author: Tel. +43 1 58801 15834; fax: +43 1 58801 15898, email: hh@cms.tuwien.ac.at 1 within the fully relativistic spin-polarized screened Korringa-KohnRostoker method and the transport properties are derived from the Kubo-Greenwood equation. Our results give evidence that interdiffusion is one of the origins of the small magnetoresistance, which is observed experimentally in Fe/Si/Fe trilayers. AFM coupling occurs for spacers thicker than 4 Å which is in accordance with the experimental …ndings. It seems that interdi¤usion stabilizes AFM coupling in Fe/Si/Fe trilayers.

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Transport properties of sputtered Fe/Si multilayers

Cited by 2 publications

References 7 publications

Interlayer exchange coupling and perpendicular electric transport in Fe/Si/Fe trilayers

Interlayer exchange coupling and perpendicular electric transport in Fe/Si/Fe trilayers

Ab Initio Study of Electric Transport and Interlayer Exchange Coupling in Fe-Si-Fe Systems

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