2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) 2012
DOI: 10.1109/essderc.2012.6343390
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Transport properties of strained silicon nanowires

Yann-Michel Niquet
1
,
Christophe Delerue
2
,
Việt Hùng Nguyễn
3
et al.

Abstract: We discuss the effect of strains on the electron and hole mobilities in silicon nanowires with diameters near 10 nm. We show that silicon nanowires are very sensitive to strains, so that strain engineering shall be a highly efficient booster for nanowire technologies.

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