Transport properties of Ti-Ni-Zr films grown by pulsed laser deposition

Abstract

Quasicrystalline Ti 41.5 Ni 17 Zr 41.5 thin films have been synthesized at different temperatures by pulsed laser deposition (PLD) from a Nd:YAG laser. Electrical resistivity, Hall coefficient, magnetoresistance and thermopower measurements have been conducted in the 4.4-300 K or 70-300 K temperature range. Ti 41.5 Ni 17 Zr 41.5 quasicrystals are characterized by a high electrical conductivity, an order of magnitude higher than in other quasicrystals, independent of their morphology and microstructure.Hall measurements indicate that the films have a high carrier concentration. Thermoelectric powers in Ti 41.5 Ni 17 Zr 41.5 have relatively small magnitudes and the values have been found to depend on the microstructure. q

Fabrication and characterization of bismuth–telluride-based alloy thin film thermoelectric generators by flash evaporation method

“…However, there are certain difficulties and limitations in making highly miniaturized devices due to the cutting and assembling processes. Thin film technology has a number of deposition methods such as flash evaporation [3][4][5], co-sputtering [6,7], pulsed laser deposition [8,9] deposition (MOCVD) [10,11] and molecular beam epitaxy (MBE) [12,13]. Here, we employ the flash evaporation method to fabricate bismuth-telluride-based alloy thin film thermoelectric generators.…”