Transport spectroscopy of a graphene quantum dot fabricated by atomic force microscope nanolithography

Puddy, R; Chua, Cassandra; Buitelaar, M. R.

doi:10.1063/1.4828663

Cited by 37 publications

(32 citation statements)

References 28 publications

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“…Buitelaar and co-workers 90 have fabricated a graphene-based quantum dot by locally oxidizing a graphene layer deposited on a silicon oxide surface (Fig. 6c).…”

Section: Nanoelectronic Devicesmentioning

confidence: 99%

Advanced scanning probe lithography

2014

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The nanoscale control afforded by scanning probe microscopes has prompted the development of a wide variety of scanning probe-based patterning methods. Some of these methods have demonstrated a high degree of robustness and patterning capabilities that are unmatched by other lithographic techniques. However, the limited throughput of scanning probe lithography has prevented their exploitation in technological applications. Here, we review the fundamentals of scanning probe lithography and its use in materials science and nanotechnology. We focus on the methods and processes that offer genuinely lithography capabilities such as those based on thermal effects, chemical reactions and voltage-induced processes. Published in:Nature Nanotechnology 9, 577-587 (2014) Progress in nanotechnology depends on the capability to fabricate, position, and interconnect nanometre-scale structures. A variety of materials and systems such as nanoparticles, nanowires, two-dimensional materials like graphene and transition metal dichalcogenides, plasmonics materials, conjugated polymers and organic semiconductors are finding applications in nanoelectronics, nanophotonics, organic electronics and biomedical applications. The success of many of the above applications relies on the existence of suitable nanolithography approaches. However, patterning materials with nanoscale features aimed at improving integration and device performance poses several challenges. The limitations of conventional lithography techniques related to resolution, operational costs and lack of flexibility to pattern organic and novel materials have motivated the development of unconventional fabrication methods [1][2][3] .Since the first patterning experiments performed with a scanning probe microscope in the late 80s, scanning probe lithography (SPL) has emerged as an alternative lithography for academic research that combines nanoscale feature-size, relatively low technological requirements and the ability to handle soft matter from small organic molecules to proteins and polymers. Scanning probe lithography experiments have provided striking examples of its capabilities such as the ability to pattern 3D structures with nanoscale features 4 , the fabrication of the smallest field-effect transistor 5 or the patterning of proteins with 10 nm feature size 6 . Figure 1a shows a general scheme of SPL operation. There is a variety of approaches to modify a material in a probe-surface interface which have generated several SPL methods. Scanning probe lithographies can be either classified by emphasizing the distinction between the general nature of the process, chemical versus physical, or by considering if SPL implies the removal or addition of material. However, we consider it is more inclusive and systematic to classify the different SPL methods in terms of the driving mechanisms used in the patterning process, namely thermal, electrical, mechanical and diffusive methods (Fig. 1b). Challenges in nanoscale lithographyThe workhorse of large volume CMOS fabrication, o...

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“…Buitelaar and co-workers 90 have fabricated a graphene-based quantum dot by locally oxidizing a graphene layer deposited on a silicon oxide surface (Fig. 6c).…”

Section: Nanoelectronic Devicesmentioning

confidence: 99%

Advanced scanning probe lithography

2014

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“…The majority of devices were fabricated by connecting graphene islands with narrow constrictions to graphene leads. 40,221,[242][243][244][245][246][247][248][249][250][251][252][254][255][256][257][258][259][260][261][262][263][264][265][266][267][268][269][270][271][272][273][276][277][278] Various designs also used gated regions: top gates on a single layer ribbon 253 and split gates on bilayer graphene. 61,234,274 Other designs used a single constriction as a quantum dot 240,241,275 or high resistive contacts.…”

Section: A Device Geometriesmentioning

confidence: 99%

Localized charge carriers in graphene nanodevices

Bischoff

Varlet

Simonet

et al. 2015

Applied Physics Reviews

100

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Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called “nanoribbons” show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

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“…[13][14][15][16] Oxidation scanning probe lithography (o-SPL) has been used to fabricate a variety of nanoscale devices on different materials such as nanowire FETs on silicon, 17,18 random access memories on gallium arsenide, 19 single photon detectors on niobium nitride, 20 or quantum dots on graphene. 21 We report the development of o-SPL to directly change the chemical composition of selected regions of a MoS 2 flake by applying a negative voltage pulse between the tip and the flake in the presence of ozone. The modification produces structures that protrude from the flake baseline.…”

mentioning

confidence: 99%