Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

Sellier, H.; Lansbergen, G. P.; Caro, J.; Rogge, Sven; Collaert, N.; Ferain, I.; Jurczak, M.; Biesemans, S.

doi:10.1103/physrevlett.97.206805

Cited by 264 publications

(309 citation statements)

References 18 publications

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“…As a consequence, the observation of quantum states in silicon nanowires requires very short channel lengths and there are only few reports of pronounced excited states in Si devices [9,10,11,12]. We have fabricated NiSi-Si-NiSi nanowires with a technique that allows the formation of dots shorter than 30 nm for which the stability diagrams of two representative devices are shown in the Supporting Information.…”

Section: Nov 2008mentioning

confidence: 99%

Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot

et al. 2009

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We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to four holes occupying the quantum dot and find a spin filling with alternating spin-down and spin-up holes, which is confirmed by magnetospectroscopy up to 9T. Additionally, a so far inexplicable feature in single-charge quantum dots in many materials systems is analyzed in detail. We observe excitations of the zero-hole ground-state energy of the quantum dot, which cannot correspond to electronic or Zeeman states. We show that the most likely explanation is acoustic phonon emission to a cavity between the two contacts to the nanowire. 1 arXiv:0811.2914v1 [cond-mat.mes-hall] Nov 2008Long spin lifetimes are crucial for applications such as spintronics [1] and even more so for quantum computation with single spins. The proposal to use single spins as quantum bits [2,3] exploits an optimal combination of the spin and charge degree of freedom [4]. The potential of this spin qubit is underlined by the recent demonstration of coherent control of one [5] and two [6] spin states in quantum dots in GaAs/AlGaAs heterostructures. Most experiments have focused on quantum dots formed in III-V semiconductors; however, electron spin coherence in those materials is limited by hyperfine interactions with nuclear spins and spin-orbit coupling. Group IV materials are believed to have long spin lifetimes because of weak spin-orbit interactions and the predominance of spinzero nuclei. This prospect has stimulated significant experimental effort to isolate single charges in carbon nanotubes [7,8], Si FinFETs [9] and Si nanowires [10]. The recent observation of spin blockade in Si/SiGe heterostructures is argued to confirm the predicted long-lived spin states [11]. Here we identify the spin states of single charges in silicon quantum dots by means of low-temperature electronic transport experiments, for the first time to the level of individual spin states.We have measured 30 Si nanowire quantum dots with pronounced excited states. In the measurements presented here, both a backgate and a side gate allow control of the number of charges down to a single hole in the dot. We observe the Zeeman energy of the first two holes at magnetic fields ranging from 0 to 9 T, from which we deduce a g-factor close to the Si bulk value. Magnetospectroscopy of the first four holes allows determination of the successive spins that are added to an empty dot and reveals a spin filling with alternating spin-down and spin-up holes. The isolation and identification of a single spin in silicon demonstrated here constitutes an important step towards spintronic applications in a material with a long spin coherence time. Additionally, we have identified many ex...

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Section: Nov 2008mentioning

confidence: 99%

Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot

et al. 2009

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“…In contrast to single atoms on metal surfaces, whose ground state is determined by the impuritysubstrate combination, transport experiments at different gate voltages can explore a wider parameter space. Signatures of single donors have been resolved and valuable information such as the electron-binding energy have been extracted [11][12][13][14] . Being a two-terminal device STM lacks a gate electrode for tuning the energy levels of nanostructures.…”

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confidence: 99%

Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope

Zheng

Berndt

2014

Nat Commun

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In devices like the single-electron transistor the detailed transport properties of a nanostructure can be measured by tuning its energy levels with a gate voltage. The scanning tunnelling microscope in contrast usually lacks such a gate electrode. Here we demonstrate tuning of the levels of a donor in a scanning tunnelling microscope without a third electrode. The potential and the position of the tip are used to locally control band bending. Conductance maps in this parameter space reveal Coulomb diamonds known from three-terminal data from single-electron transistors and provide information on charging transitions, binding energies and vibrational excitations. The analogy to single-electron transistor data suggests a new way of extracting these key quantities without making any assumptions about the unknown shape of the scanning tunnelling microscope tip.

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“…In addition to the quantum size effect, which is commonly considered as the origin behind nanoscale phenomena [1], random dopant distribution has been reported as another source behind the changing in device performance [2][3][4]. More importantly, it has been reported that individual donor [5][6] and acceptor [7][8] may mediate carrier transport. This has opened an opportunity to utilize individual dopant as an active part for device functionalities.…”

Section: Introductionmentioning

confidence: 99%

Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction

Udhiarto¹,

Purwiyanti²,

Moraru³

et al. 2013

MST

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We study nanowire silicon pin and pn-junctions at room and low temperature. Photovoltaic effects are observed for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered to have the main role for single-photon detection capability. Fundamental mechanism of dopant-based single-photon detection in nanowire pn-junction is described in details. Abstrak Pengamatan terhadap Efek Fotovoltaik dan Deteksi Foton Tunggal pada Simpangan-pn Silikon Kawat Nano.Kami mempelajari pin dan simpangan-pn silikon pada suhu ruangan dan suhu rendah. Efek fotovoltaik diamati pada kedua komponen pada suhu ruangan. Pada suhu rendah, komponen simpangan-pn kawat nano menunjukkan kemampuan untuk mendeteksi adanya foton tunggal. Kemampuan ini tidak ditemukan pada komponen pin. Kluster dopan boron berfosfor pada daerah deplesi dianggap memainkan peranan utama dalam kemampuannya untuk mendeteksi foton. Mekanisme dasar dari deteksi foton tunggal berbasis dopant pada simpangan-pn kawat nano digambarkan secara mendetail.

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Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

Cited by 264 publications

References 18 publications

Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot

Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot

Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope

Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction

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