Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.

Section: Resultsmentioning

confidence: 99%

Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor*

Zhang

Han

et al. 2019

“…With the gate voltage increasing, the Fermi energy level of electrons in the quantum confined channel is allowed to enter the conduction subbands, resulting in the current steps. [28,29] In order to study the temperature-dependent conductance G characteristics in Fig. 2(a), we firstly extract the experimental conductance data for different temperatures according to the initial g m peak at the gate voltage V g1 , in which the effective mobility of hopping electrons is the highest in the impu-rity band.…”

Section: Resultsmentioning

confidence: 99%

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors*

Guo¹,

Han²,

Zhao³

et al. 2019

Self Cite

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics. There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data, which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance g m peak in V g1 and valley in V g2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages V g1 and V g2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

“…[13,14] However, the design of CMOS qubitcontrol circuits at cryogenic temperatures is a difficult task, since the physical modeling of cryogenic temperature MOS-FETs operation is not so fully developed due to the sophisticated physics at 4.2 K compared to room temperature. [15][16][17][18][19] Thus, the cryo-CMOS device modeling and simulation down to 4.2 K are not adequate yet.…”

Section: Introductionmentioning

confidence: 99%

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs*

Zhang¹,

Chang²,

Du³

et al. 2020

The impacts of remote Coulomb scattering (RCS) on hole mobility in ultra-thin body silicon-on-insulator (UTB SOI) p-MOSFETs at cryogenic temperatures are investigated. The physical models including phonon scattering, surface roughness scattering, and remote Coulomb scatterings are considered, and the results are verified by the experimental results at different temperatures for both bulk (from 300 K to 30 K) and UTB SOI (300 K and 25 K) p-MOSFETs. The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature (4.2 K). The results reveal that as the temperature decreases, the RCS due to the interfacial trap charges plays an important role in the hole mobility.