Transport through capacitively coupled embedded and T-shape quantum dots in the Kondo range

Krychowski, D.; Florków, P.; Antkiewicz, M.; Lipiński, S.

doi:10.1016/j.physe.2017.12.014

Cited by 4 publications

(4 citation statements)

References 27 publications

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“…Krychowski et al studied the capacitive coupling effect without tunneling coupling using finite-U slave-boson meanfield theory (SBMFT). [32] SBMFT can qualitatively describe features of the Fermi-liquid ground state, but it does not simulate Hubbard peaks in spectral functions; thus, cannot yet describe K-F interference. As will be demonstrated, the shift of Hubbard peaks and their interplay with the Kondo peak play essential roles in K-F interference which is the main concern of the present work.…”

Section: Introductionmentioning

confidence: 99%

Capacitive coupling induced Kondo–Fano interference in side-coupled double quantum dots*

Sun¹,

Wang²,

Wei³

et al. 2020

Chinese Phys. B

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We report capacitive coupling induced Kondo–Fano (K–F) interference in a double quantum dot (DQD) by systematically investigating its low-temperature properties on the basis of hierarchical equations of motion evaluations. We show that the interdot capacitive coupling U 12 splits the singly-occupied (S-O) state in quantum dot 1 (QD1) into three quasi-particle substates: the unshifted S-O0 substate, and elevated S-O1 and S-O2. As U 12 increases, S-O2 and S-O1 successively cross through the Kondo resonance state at the Fermi level (ω = 0), resulting in the so-called Kondo-I (KI), K–F, and Kondo-II (KII) regimes. While both the KI and KII regimes have the conventional Kondo resonance properties, remarkable Kondo–Fano interference features are shown in the K–F regime. In the view of scattering, we propose that the phase shift η(ω) is suitable for analysis of the Kondo–Fano interference. We present a general approach for calculating η(ω) and applying it to the DQD in the K–F regime where the two maxima of η(ω = 0) characterize the interferences between the Kondo resonance state and S-O2 and S-O1 substates, respectively.

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Section: Introductionmentioning

confidence: 99%

Capacitive coupling induced Kondo–Fano interference in side-coupled double quantum dots*

Sun¹,

Wang²,

Wei³

et al. 2020

Chinese Phys. B

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“…There is currently also a great interest in the interplay of strong correlations and interference in multiply connected geometries, for example, in T-shaped systems, where a dot or a molecule are side-coupled to a quantum wire [18][19][20][21][22][23][24][25][26]. Sidewall chemical functionalization of molecular wires is already a well-established branch of research.…”

Section: Introductionmentioning

confidence: 99%

Impact of electron–phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

Florków¹,

Lipiński²

2021

Beilstein J. Nanotechnol.

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We calculate the conductance through strongly correlated T-shaped molecular or quantum dot systems under the influence of phonons. The system is modelled by the extended Anderson–Holstein Hamiltonian. The finite-U mean-field slave boson approach is used to study many-body effects. Phonons influence both interference and correlations. Depending on the dot unperturbed energy and the strength of electron–phonon interaction, the system is occupied by a different number of electrons that effectively interact with each other repulsively or attractively. This leads, together with the interference effects, to different spin or charge Fano–Kondo effects.

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“…There is currently also a great interest in the interplay of strong correlations and interference in multiply connected geometries e.g. in T-shaped systems, where dot or molecule is side-coupled to a quantum wire [18][19][20][21][22][23][24][25][26]. Sidewall chemical functionalization of molecular wires is already a well-established branch of research.…”

Section: Introductionmentioning

confidence: 99%

Impact of electron-phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

Florków,

Lipiński

2021

Preprint

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We calculate the conductance through strongly correlated T-shaped molecular or quantum dot systems under the influence of phonons. The system is modelled by the extended Anderson-Holstein Hamiltonian. The finite-U mean-field slave boson approach is used to study many-body effects. Phonons influence both interference and correlations. Depending on the dot unperturbed energy and the strength of electron-phonon interaction the system is occupied by a different number of electrons which effectively interact with each other repulsively or attractively. This leads together with the interference effects to different spin or charge Fano-Kondo effects.

show abstract

Transport through capacitively coupled embedded and T-shape quantum dots in the Kondo range

Cited by 4 publications

References 27 publications

Capacitive coupling induced Kondo–Fano interference in side-coupled double quantum dots*

Capacitive coupling induced Kondo–Fano interference in side-coupled double quantum dots*

Impact of electron–phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

Impact of electron-phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

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