Transverse laser induced thermoelectric voltage effect in tilted La0.5Sr0.5CoO3 thin films

Laser-induced thermoelectric voltage effect of La0.9Sr0.1NiO3 films

“…On the other hand, owing to the low bulk resistance of bulk materials and the high specific surface area of the thin films, the sensitivity of detectors can be effectively improved. However, LITV effect exhibits a series of superiority, such as broad-spectrum [12][13][14][15], fast response and high sensitivity compared with the state of art in light detectors are based on the pyroelectric effect, avalanche effect [16][17][18]. Although light detectors of LITV type exhibit the * Corresponding author.…”

Direct Detection of Oil Shale Yields: A Laser-Induced Voltage Investigation

“…The voltage pulse rose rapidly at the beginning. After reaching the V p , the LIV signals slowly decreased . The full width at half-maximum of the etemporal voltage and the rising time were 110–170 ms and 2–4 μs, respectively.…”

Ultrafast transverse thermoelectric response in c‐axis inclined epitaxial La0.5Sr0.5CoO3 thin films

“…As the tilted LSCO film has a resistance of about 2 Ω, the $U_{\rm p} $ measured by the 1 MΩ termination is much more credible than the voltage recorded by the 50 Ω termination because there is a voltage division when using the 50 Ω termination. The origin of these voltage signals induced by the laser irradiation in this kind of materials has been discussed in our previous results 2, 12, 13, 21, which concludes that the transverse Seebeck effect should be responsible for these signals. Considering an irradiation area of $3\; \times \;2.7\; = \;8.1\;{\rm mm}^2 $ and the tilted angle of 4.855°, the responsivity of LSCO film is as large as 0.194 V(mJ) –1 (degree) –1 , which is higher than that in La 1– x Ca x MnO 3 (0.02 ∼ 0.07 V(mJ) –1 (degree) –1 ) 12–14, Bi 2 Sr 2 Co 2 O y (0.03 V(mJ) –1 (degree) –1 ) 18, and Al doping ZnO (0.0011 V(mJ) –1 (degree) –1 ) 19 thin films.…”

“…It must be pointed out that this work shows some differences compares with our previous results in Ref. 21: (1) A higher oxygen pressure annealing for film growth has been employed in this Letter, which reduces the oxygen deficiency and leads to lower resistivity; (2) Cr/Au evaporated electrodes have been used, instead of in‐plane indium electrodes, ensuring the Ohmic contact; (3) a much more advanced optical setup with precise control of energy density and laser beam size has been utilized; (4) an oscilloscope with larger bandwidth and two terminations has been employed to record voltage signals accurately. These changes should be responsible for the new results in this Letter.…”