Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures*

Abstract

The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional (2D)–three-dimensional (3D) channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure (DH:Si/C). Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure (SH:C). There are fast, medium, and slow trap states in DH:Si/C, while only medium trap states exist in SH:C. The time constant/trap density for medium trap state in SH:C heterostructure are (11 μs–17.7 μs)/(1.1 × 1013 cm−2·eV−1–3.9× 1013 cm−2·eV−1) and (8.7 μs–14.1 μs)/(0.7× 1013 cm−2·eV−1–1.9× 1013 cm−2·eV−1) at 300 K and 500 K respectively. The time constant/trap density for fast, medium, and slow trap states in DH:Si/C heterostructure are (4.2 μs–7.7 μs)/(1.5× 1013 cm−2·eV−1–3.2× 1013 cm−2·eV−1), (6.8 μs–11.8 μs)/(0.8× 1013 cm−2 · eV−1–2.8× 1013 cm−2 · eV−1), (30.1 μs–151 μs)/(7.5× 1012 cm−2 · eV−1–7.8× 1012 cm−2 · eV−1) at 300 K and (3.5 μs–6.5 μs)/(0.9× 1013 cm−2 · eV−1–1.8× 1013 cm−2 · eV−1), (4.9 μs–9.4 μs)/(0.6× 1013 cm−2 · eV−1–1.7× 1013 cm−2 · eV−1), (20.6 μs–61.9 μs)/(3.2× 1012 cm−2 · eV−1–3.5× 1012 cm−2·eV−1) at 500 K, respectively. The DH:Si/C structure can effectively reduce the density of medium trap states compared with SH:C structure.

The interface trap analysis of AlGaN/GaN high electron mobility transistors with temperature based on conductance method

“…The slope of the capacitance curve decreases with increasing temperature in the voltage range where the curve rises. This is related to the spread of 2DEG to GaN side [10]and the high temperature leakage caused by GaN layer trap [8][9]. C is the depleted area deep in the GaN buffer layer.…”

“…The trapping behavior was different at both temperatures. In 2020, Sheng Hu et al [8] studied the trap of the verification channel of AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterogeneous structure under 25-300℃ temperature. They discovered three different kinds of interface trap in this structure: fast, medium and slow.…”

Probability density and oscillating period of magnetopolaron in parabolic quantum dot in the presence of Rashba effect and temperature*

“…where φ 0 (𝑟) and φ 1 (𝑟) are the state wave functions of the system expressed by Eqs. ( 7) and (8). Thus…”

“…As nano science and technology grow rapidly, researchers are increasingly interested in investigations of lowdimensional quantum structures. [1][2][3][4][5][6][7][8][9] Recently, a great deal of interest has been drawn in studying spin-orbit interaction in semiconductor-based nanostructures. [10][11][12] One of the important and typical spin-orbit interaction in quantum dots (QDs) system is the Rashba spin-orbit interaction (RSOI) which was discovered by Rashba.…”

Modeling of high permittivity insulator structure with interface charge by charge compensation

“…[7][8][9] Therefore, the quick designing of BV and R on,sp , which is dependent not only on drift region doping concentration, but also on interface charge, becomes a complex work to facilitate the optimization. [10][11][12][13] Owing to material-dependent HK pillar, BV 2 /R on,sp regarded as the figure of merit gives a useful insight into the assessment of compromising BV-R on,sp . [14,15] Although BV varies in a range of −8.1%-5.3% with unintentional penalty in R on,sp increment affected by HK pillar, [16,17] in the case of HKMOS with interface charge, the BV-R on,sp trade-off becomes difficult to account for.…”