Trap Behavior of the Optical Power Fluctuation in AlGaN-Based UV-C LEDs Degradation

Su, Mengwei; Liu, Hongxia; Cai, Ming; Sun, Wenhong

doi:10.1109/ted.2022.3226672

Cited by 3 publications

(6 citation statements)

References 40 publications

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“…[139][140][141][142][143][144] The density of point defects acting as centers for trap-assisted radiative recombination outside the active region increased. Typically, the degradation is accelerated by the operation current and temperature 28,40,41,49,57,100,107,126,[142][143][144][145][146][147][148] Trivellin et al 127 summarized mechanisms for the degradation of output power deep UV LEDs during operation and suggested that there were a number of processes that could be present. These included: i.…”

Section: Literature Resultsmentioning

confidence: 99%

“…120,121 Uedono et al 122 reported formation of vacancy-oxygen complexes in AlN epitaxial films and suggested these could be a source of grown-in defects in the layers used for the deep UV LEDs. Su et al 147 reported an increase in concentration of deep trap states at Ec-0.5 eV (E2), 0.68--0.79 eV (E3), and 0.95-1.2 eV (E4) after current stress.…”

Section: Literature Resultsmentioning

confidence: 99%

“…What is clear from the literature is i. Multiple degradation mechanisms may be present 41,108,109,[142][143][144][145][146][147][148][149][150] ii. Migration of defects already present in the as-grown structure, or created during subsequent operation, can migrate into the active regions.…”

Section: Literature Resultsmentioning

confidence: 99%

“…Migration of defects already present in the as-grown structure, or created during subsequent operation, can migrate into the active regions. 41,97,[142][143][144][145][146][147][148][149][150] iii. Careful attention must be paid to removing residual hydrogen incorporated in the epi structure from the growth precursors.…”

Section: Literature Resultsmentioning

confidence: 99%

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Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs

Letson

Conklin

Wass

et al. 2023

ECS J. Solid State Sci. Technol.

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There are numerous applications for deep UV AlGaN light-emitting diodes (LEDs) in virus inactivation, air and water purification, sterilization, bioagent detection, and UV polymer curing. The long-term stability of these LEDs is also of interest for long-duration space missions such as the Laser Interferometer Space Antenna, the first gravitational wave detector in space. We review the literature on long-term aging of these devices as a function of drive current, temperature, and dc versus pulsed operation. LEDs typically show a gradual decline in output power (up to 50%) over extended operating times (>100 h) and the rate of decline is mainly driven by current and temperature. Experimentally, the degradation rate is dependent on the cube of drive current density and exponentially on temperature. The main mechanism for this decline appears to be creation/ migration of point defects. Pre-screening by considering the ratio of band edge-to-midgap emission and LED ideality factor is effective in identifying populations of devices that show long lifetimes (>10,000 hours), defined as output power falling to 70% of the initial value.

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Section: Literature Resultsmentioning

confidence: 99%

Section: Literature Resultsmentioning

confidence: 99%

Section: Literature Resultsmentioning

confidence: 99%

Section: Literature Resultsmentioning

confidence: 99%

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Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs

Letson

Conklin

Wass

et al. 2023

ECS J. Solid State Sci. Technol.

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“…[74] The energy consumption of simulated excitatory and inhibitory per spike is calculated to be ≈234 and 40 fJ respectively, close to the energy consumption of biological synapses (≈10 fJ), demonstrating the immense potential of 2D FeFETs in neural computing. [75] In addition, the thermal configuration of the device for neuromorphic computing is shown in Figure 7e. Thermal assistance can provide a larger dynamic range for network weight mapping, which can help improve computational accuracy.…”

Section: Spiking Neural Network and Artificial Neural Networkmentioning

confidence: 99%

Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Yang,

Ng,

et al. 2024

Adv Funct Materials

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The rapid development in information technologies necessitates rapid advancements of their supporting hardware. In particular, new computing paradigms are needed to overcome the bottleneck of traditional von Neumann architecture. Bottom‐up innovation, especially at the materials and devices level, has the potential to disrupt existing technologies through their emergent phenomena. As a new type of conceptual device, 2D ferroelectric field‐effect transistor (FeFET) is highly sought after due to its potential integration with modern semiconductor processes. Its low power consumption, area efficiency, and ultra‐fast operation provide an extra edge over traditional technologies. This review highlights recent developments in 2D FeFET, covering their device construction, working mechanisms, 2D ferroelectric polarization mechanism, multi‐functional applications and prospects. In particular, the combination of 2D semiconductor and ferroelectric dielectric materials for multi‐functionality applications is discussed. This includes non‐volatile memories (NVM), neural network computing, non‐volatile logic operation, and photodetectors. As a novel device platform, 2D semiconductor and ferroelectric interfaces are bestowed with a plethora of emergent physical mechanisms and applications.

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Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation

Su,

Liu

2024

IEEE Trans. Electron Devices

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Trap Behavior of the Optical Power Fluctuation in AlGaN-Based UV-C LEDs Degradation

Cited by 3 publications

References 40 publications

Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs

Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs

Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation

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