Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Dong, Bin; Lin, Jie; Wang, N.; Jiang, Lingli; Liu, Zongdai; Hu, Xiaoyan; Cheng, Kai; Yu, Hong‐Yu

doi:10.1063/1.4963740

Cited by 12 publications

(4 citation statements)

References 27 publications

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“…30 At the beginning of cooling, most of activated pre-existing traps were de-activated, the electrons captured by the traps at the SiN X /GaN interface and in the barrier injected back to channel, which counterbalanced the influence of nitrogen vacancy defects on V th and then resulted in the V th moving in negative direction. As the temperature is further reduced, more electrons moved back to channel and the nitrogen vacancy defect mechanism dominated the V th moving toward the positive direction once again.…”

Section: Resultsmentioning

confidence: 99%

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Iervolino

2017

AIP Advances

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Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

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Section: Resultsmentioning

confidence: 99%

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Iervolino

2017

AIP Advances

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“…The basic theory of pulsed stress has been reported in early publications. 29,30) The decay time comparison of the two heating mode at the same heating power (temperature) are shown in Fig. 4(b).…”

Section: Applied Physics Expressmentioning

confidence: 99%

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

Sun

Zhan

Liu

et al. 2019

Appl. Phys. Express

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This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively accelerated by applying pulsed heating. The decay time is significantly reduced from 175 s by DC heating to 116 s by 50 Hz pulsed heating at the same power (280 mW). With the same pulse duty cycle and a 50 Hz pulsed heating frequency, a reduction of 30%-45% in decay time is measured compared to DC heating.

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“…[1] Generally, the trapping effect in an MIS gate stack could be related to traps at or near the interface, named interface states/border traps, or in the bulk of the insulator. [2,3] To date, various technologies have been employed to suppress threshold voltage (𝑉 th ) shift, including pre-fluorination argon treatment, [4] sputter deposited Al 2 O 3 , [5] and in situ dielectric predeposition plasma nitridation, [6] to reduce the trapping effect at/near the insulator/semiconductor interface. Due to the low deposition temperature, traps occur in high densities in the bulk gate insulators deposited by PECVD or ALD.…”

mentioning

confidence: 99%

Performance Enhancement of AlGaN/GaN MIS-HEMTs Realized via Supercritical Nitridation Technology

Li¹,

Huang²,

Chang³

et al. 2020

Chinese Phys. Lett.

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This paper proposes a method of repairing interface defects by supercritical nitridation technology, in order to suppress the threshold voltage shift of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). We find that supercritical NH3 fluid has the characteristics of both liquid NH3 and gaseous NH3 simultaneously, i.e., high penetration and high solubility, which penetrate the packaging of MIS-HEMTs. In addition, NH 2 − produced via the auto coupling ionization of NH3 has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature processes. After supercritical fluid treatment, the threshold voltage shift is reduced from 1 V to 0 V, and the interface trap density is reduced by two orders of magnitude. The results show that the threshold voltage shift of MIS-HEMTs can be effectively suppressed by means of supercritical nitridation technology.

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Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Cited by 12 publications

References 27 publications

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

Performance Enhancement of AlGaN/GaN MIS-HEMTs Realized via Supercritical Nitridation Technology

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