Trap engineering through chemical doping for ultralong X-ray persistent luminescence and anti-thermal quenching in Zn₂GeO₄

Abstract

Recently, defect luminescence based ultralong persistent luminescent (PersL) materials have been increasingly appreciated for advanced applications. However, in-depth understanding of trap manipulation is a big challenge in controlling the trap...

Synergy between structural rigidity and cluster defects in a bright near-infrared Cr3+-based phosphor for excellent thermal stability and long afterglow

“…We evaluated the activation energy for thermal quenching of the 2 E → 4 A 2 emission band using the Arrhenius equation: 51 I T = I 0 /(1 + A exp(−Δ E / kT ))where I 0 and I T are the integrated emission intensities at the initial ( T 0 ) and given temperatures ( T ), respectively, Δ E denotes the activation energy for thermal quenching, k is the Boltzmann constant, and A is a constant. The E a values were calculated by linear fit of experimental data in the ln[( I 0 / I T ) − 1] versus 1/ kT plot shown in Fig.…”