Trap-induced self-recoverable photochromism of rare-earth doped sodium niobate translucent ceramics

Temporal dynamic photochromic materials for advanced anticounterfeiting

“…43 The trap depth ( E T ) was calculated using the formula: E T = T m /500 (where T m represents the temperature of the TL peak). 51,52 The calculated values of E T were found to be 0.88, 0.94, and 1.18 eV, indicating that all trap depths of BMS were larger than 0.75 eV, resulting in the formation of deep carrier traps (DT). 24,53 Unlike Nb 2 O 5 , KNN, and NaNbO 3 , which exhibit shallower trap depths, the deep-lying DT traps in BMS captured electrons more stably, thereby dominating the photochromic behavior.…”

Rare‐Earth‐Ion Doped Bi1.5ZnNb1.5O7 Photochromics: A Fast Self‐Recoverable Optical Storage Medium for Dynamic Anti‐Counterfeiting with High Security

“…Likewise, the time dimension could also be realized in the inorganic PC materials involving the similar processes of dynamic capture and escape of electrons, while not enough attentions have been paid on this topic. [38,41] Especially, for self-recovery PC with selfescape of shallow trapped carriers over time, the developed material systems are extremely limited and the recovery time is always too long to save the anti-counterfeiting efficiency. [38] In this work, a kind of rapid self-recovery BZN, featured with the fastest self-bleaching time of color centers ever reported, was discovered.…”