Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method

Wen, Qian; Zhou, Lixing; Meng, Xianwei; Feng, Shiwei; Zhang, Yamin

doi:10.1109/tdmr.2024.3495987

IEEE Trans. Device Mater. Relib.

2024

DOI: 10.1109/tdmr.2024.3495987

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Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method

Qian Wen,

Lixing Zhou,

Xianwei Meng

et al.

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Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method

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References 35 publications

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