Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

Abstract

n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device.

Gamma irradiation effects on n-ZnSe/n-Si isotype heterojunctions

“…When two different semiconductors of the same type ( − or − ) are brought into close contact, the resulting heterostructure is usually referred to as − or − isotype heterojunction (IHJ). In − junctions, the currents are contributed from both electrons and holes, but in − and − IHJs, the currents are predominantly contributed from the electrons and holes respectively [1,2].…”

“…Particularly, silicon based IHJs with large lattice mismatch (∆), for example, / (17%) [2], / (4.2%) [3] and / (40.1%) [4], were being reported to gain insight into the IHJs properties as well as their possible applications, despite experimental difficulties in accounting role of defects due to greater lattice mismatch. Generally, the − IHJs are not preferred for high-speed electronic applications due to large effective mass and less mobility of holes [2]. But − IHJs have applications in different electronic devices such as solar cells and injection lasers [1], photodetectors [2,5,6] and light emitting diodes (LEDs) [7].…”

“…Generally, the − IHJs are not preferred for high-speed electronic applications due to large effective mass and less mobility of holes [2]. But − IHJs have applications in different electronic devices such as solar cells and injection lasers [1], photodetectors [2,5,6] and light emitting diodes (LEDs) [7].…”

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

“…Circular aluminum contacts with diameters of 600 μm were then deposited by thermal evaporation on the InGaN films and Si (111) substrate with the help of a physical mask to study the current-voltage and photoresponse studies. Figure 8(a) shows the 2θ-ω HRXRD scan of InGaN epilayers on Si (111) substrates [88]. The peaks at 2θ = 28.…”

“…The other dark regions are formed as a result from the Ga ion beam damage during sample thinning. [88].…”