Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures

Jiang, X. L.; Zhao, Yonggang; Zhang, X.; Zhu, Mao-Cong; Zhang, H. Y.; Shang, Dashan; Sun, J. R.

doi:10.1063/1.4809948

Cited by 25 publications

(13 citation statements)

References 24 publications

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“…[31][32][33] It is known that the defects, such as the oxygen vacancies (VO), can be present in the LAO layer during film growth and form localized states (LS) in the LAO band gap. [34][35][36][37] Hence, the IET process via these LS [31][32][33][38][39][40] via LS is the main mechanism of the spin transmission through the LAO layer, the SOT efficiency is expected to exhibit a very strong temperature dependence as indicated by the Glazman-Matveev (GM) theory, 31,33,38,41 , which describes the IET with a power law dependence on temperature.…”

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confidence: 99%

Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO₃–LaAlO₃ Oxide Interface

et al. 2017

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Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced spin-orbit torque scheme, has not been demonstrated yet.Here we show, for the first time, a highly efficient spin generation with the efficiency of ~6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance.In addition, we suggest that the spin transmission through the LAO layer at high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices.

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Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO₃–LaAlO₃ Oxide Interface

et al. 2017

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“…It is well accepted that the interface state seriously affects the formation of the Schottky barrier, and the field-induced metastable modification of the interface state contributes to the memory effect18. For example, a metal-ferroelectric Schottky junction allows the charge redistribution at the junction interface due to the polarization reversion and as a result modulates the interfacial states as well as the interface barrier, inducing the nonvolatile resistance switching1019. Ferroelectrics usually have very large resistivity due to the large band gap20, while a large resistance of ferroelectric film would reduce or even conceal the differences between the HRS and LRS of whole metal-ferroelectric structure.…”

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Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

Yan

Liu

2013

Sci Rep

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The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.

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“…So far the mechanisms of RS, which are related to some important scientific issues and also significant for applications of RS, have not been solved . Diverse mechanisms have been proposed to explain the observed RS effect, including formation/rupture of conducting filaments, − alteration of Schottky barrier, and trapping/detrapping of charge carriers . Among them, the conducting filament model is the most extensive and popular one, which involves unique physics, including nonequilibrium steady states and strongly interacting electrons. , Rich and interesting phenomena, such as conductance quantization, , magnetoresistance, and superconductivity, have been shown because of the various types of filaments.…”

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confidence: 99%

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States

Zhao

Qiao

Luo

et al. 2017

ACS Appl. Mater. Interfaces

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The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.

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Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures

Abstract: Trap-assisted tunneling resistance switching effect in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3 heterostructure Appl.

Cited by 25 publications

References 24 publications

Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO₃–LaAlO₃ Oxide Interface

Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO₃–LaAlO₃ Oxide Interface

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States

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Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures

Abstract: Trap-assisted tunneling resistance switching effect in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3 heterostructure Appl.

Cited by 25 publications

References 24 publications

Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO3–LaAlO3 Oxide Interface

Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO3–LaAlO3 Oxide Interface

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States

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Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO₃–LaAlO₃ Oxide Interface

Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO₃–LaAlO₃ Oxide Interface