Lanthanide-doped semiconductor nanoparticles could have advantages in polymer-based light-emitting diodes (LEDs), displays, lasers, and optical amplifiers. These materials would offer the advantages of lanthanide luminescence combined with the generation of light directly from electrical current, for instance, in polymer LEDs.[1] Lanthanide luminescence arises from transitions within the 4f shell of the ion, which are parity forbidden. This forbidden character leads to long luminescent lifetimes and low absorptions. The long luminescence lifetimes of the lanthanide ions has a clear advantage in applications where population inversion is required, such as in lasers and optical amplifiers. Energy transfer from the excited semiconductor host to the lanthanide ion could be an efficient way to circumvent the low absorption of the ion and to give the possibility of excitation with electrical current. Semiconductor nanoparticles that are dispersible in organic solvents have been prepared and attempts have been made to dope these particles with lanthanide ions. The doping of lanthanide ions in semiconductor nanoparticles has mainly been focused on II±VI semiconductors, such as ZnS, CdS, and CdSe. However, to date no convincing evidence has been shown that this was successful.[2] Direct evidence can be found in the excitation spectrum of the lanthanide emission, in which not only the absorption peaks of the lanthanide ions should be present, but also the absorption of the semiconductor host, thereby clearly demonstrating the energy transfer of the semiconductor host to the lanthanide ion. Raola and Strouse reported the doping of Eu 3 + ions in CdSe nanoparticles, but no luminescence studies were performed.[3] They introduced the europium in the form of Eu 2 + and found with X-ray photoelectron spectroscopy that after work-up the oxidation state was Eu(iii). Difficulties in doping most likely arise from the large difference in the size of the host cation and the lanthanide ion, the charge mismatch between the cations, and the low affinity of the lanthanide ions towards sulfur and selenium. Lanthanide ions do have a high affinity for oxygen and, herein, the successful doping of lanthanide ions in the oxygen-based semiconductor TiO 2 and energy transfer from the semiconductor to the dopant Ln 3 + ion is presented.The thermal decomposition of organometallic precursors in trioctylphosphine oxide (TOPO) is a well-developed synthesis route to obtain II±VI semiconductor nanoparticles.[4] Recently, the synthesis of TiO 2 particles in TOPO by the high-temperature decomposition of [Ti(OPr i ) 3 (dmae)] ( i Pr = isopropyl; dmae = dimethylaminoethoxide) was also described.[5] This procedure was modified to obtain lanthanide-ion-doped TiO 2 nanoparticles.An FTIR spectrum was measured of nanoparticles dried under vacuum over P 2 O 5 at 80 8C (Figure 1). A broad band centered at 3300 cm À1 was found, which can be ascribed to the Figure 1. FTIR spectrum of TOPO-capped TiO 2 :Eu particles in KBr. The spectrum was measured on a Perkin Elmer...