Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics

Abstract

Trapezoid mesa trench metal oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics * Li Wei-Yi( ), Ru Guo-Ping( ) † , Jiang Yu-Long( ), and Ruan Gang( )

Energy-efficient electronics with an air-friction-driven rotating gate transistor using tribotronics

“…Accordingly, the very thin insulator layers often result in charge-to-breakdown in conventional FETs. 46 , 47 , 48 Conversely, insufficient charge induction becomes prominent if the PVDF substrate in the AFRGT is excessively thin.

Figure 5 Variation in drain current for different PVDF substrate thicknesses Variation in drain current according to drain voltage in the AFRGT (10, 50, 100, 150, and 200 μm) employing (A) a bare aluminum gate and (B) a polyimide-covered gate.

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