Trapping Center Parameters in TlInS₂Layered Crystals by Thermally Stimulated Current Measurements

Abstract

Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS 2 crystal in the low-temperature region.

Spectroscopic Ellipsometry Studies and Temperature Behaviour of the Dielectric Function of TlInS2 Layered Crystal

“…A phenomenological approach applied for the description of the phase transitions in TlInS2 enabled qualitative agreement with the experimental dependence of thermodynamical functions on temperature to be obtained [3][4][5]. For these materials extensive temperature studies of acoustic [6], electrical [7][8][9][10][11][12], and optical [13][14][15][16] properties were carried out while ellipsometric studies of A III B III C VI (A  Tl, B  (In, Ga), C  (S, Se)) chalcogenides were subject of several publications [17][18][19][20][21][22][23][24][25][26].…”

Study of Dielectric Relaxation Behavior of Liquid Crystal Copolyester Vectra-A by Thermally Stimulated Discharge Current Technique

“…Here, and are the area and thickness of the sample, respectively, is the electronic charge, and is the photoconductivity gain, which is equal to the number of electrons passing through the sample for each absorbed photon. The value of is taken unity for the calculation of concentration of the traps [8].…”

Deep Traps Distribution in TlInS2Layered Crystals

“…The shallow levels in the TlInS 2 crystals in the temperature range below 90 K have been studied in Ref. [23]. In this study, the TSC measurements in TlInS 2 crystals over the temperature range of 10-90 K revealed that there was a trap level in the energy gap with activation energy of 12 meV.Özdemir et al [24] have investigated the trap levels in TlInS 2 crystals by TSC spectroscopy in the temperature range of 90-200 K. Analysis of the experimental spectra represented a series of trap levels with energy depths ranging from 150 to 220 meV in the energy gap.…”