Trapping effect of metal nanoparticle mono- and multilayer in the organic field-effect transistor

Lee, Keanchuan; Weis, Martin; Lin, Jack; Taguchi, Dai; Majková, E.; Manaka, Takaaki; Iwamoto, Mitsumasa

doi:10.1063/1.3567916

Cited by 15 publications

(18 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We assign this barrier to a trap state in the HOMO-LUMO gap, near the HOMO. [20][21][22] Extrapolation to infinite temperature yields a trap-free mobility of μ0 = 0.26 cm 2 /Vs. Without the NPs, we measured an activation energy EA = 65 meV (see Fig.…”

Section: Resultsmentioning

confidence: 99%

Low voltage and time constant organic synapse-transistor

Desbief

Kyndiah

Guérin

et al. 2015

Organic Electronics

View full text Add to dashboard Cite

Abstract.We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when stimulating the device with input spikes of 1 volt. Both significant facilitating and depressing behaviors of this artificial synapse are observed with a relative amplitude of about 50% and a dynamic response < 200 ms. From a series of in-situ experiments, i.e. measuring the current-voltage characteristic curves in-situ and in real time, during the growth of the pentacene over a network of gold nanoparticles, we elucidate these results by analyzing the relationship between the organic film morphology and the transport properties. This synapstor works at a low energy of about 2 nJ/spike. We discuss the implications of these results for the development of neuro-inspired computing architectures and interfacing with biological neurons.

show abstract

Section: Resultsmentioning

confidence: 99%

Low voltage and time constant organic synapse-transistor

Desbief

Kyndiah

Guérin

et al. 2015

Organic Electronics

View full text Add to dashboard Cite

show abstract

“…The Ag NPs layer provided deep traps as reported previously. 21 Here, Ag NPs with the size of approximately $8 nm were encapsulated in oleic acid/oleylamine. In addition, they were deposited in the similar manner described in Ref.…”

Section: Methodsmentioning

confidence: 99%

“…In addition, they were deposited in the similar manner described in Ref. 21 SourceMeter determines the contact resistances and effective mobilities. After the first measurement, the samples were maintained in an environment with a vapor density of 243 g/m 3 and at a temperature of 80 C for 30 min to accelerate the aging process.…”

Section: Methodsmentioning

confidence: 99%

Conservation of the injection and transit time ratio in organic field-effect transistors: A thermally accelerated aging study

Lee

Weis

Manaka

et al. 2012

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

A thermally accelerated aging for degradation study was used to evaluate the degradation of organic transistor with shallow and deeps traps. A negative threshold voltage shift related to the increase of trapped charge density during the aging was only observed for device with initial shallow traps, while no shift was recorded for devices with deep traps. However, a decrease in the mobility was detected, and an almost constant contact resistance was estimated for both types of devices. Analysis of the potential distribution revealed the conservation of the potential drop on the injection electrode and across the channel region during the entire degradation process. As a result, the ratio of the injection and transit times was conserved and was independent from the shallow traps that were induced by accelerated aging.

show abstract

“…Note that no change in pentacene morphology was observed when a NPs SAM was introduced. 13 Figure 2 shows transfer characteristics of OFETs with 50 μm channel length. Both devices exhibited a typical OFET behaviour.…”

Section: Methodsmentioning

confidence: 99%

“…The SAMs of NPs are homogeneous on large areas and free of cracks. 13 The density of NPs on the surface was estimated as 2×10 12 cm −2 by assuming the NPs are closely-packed and we used this value in the analysis in section III. Organic devices used in experiments were top-contact pentacene OFETs, as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

et al. 2012

Self Cite

View full text Add to dashboard Cite

A silver nanoparticles self-assembled monolayer (SAM) was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V) and impedance spectroscopy (IS) measurements. The I − V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state

show abstract

Trapping effect of metal nanoparticle mono- and multilayer in the organic field-effect transistor

Cited by 15 publications

References 38 publications

Low voltage and time constant organic synapse-transistor

Low voltage and time constant organic synapse-transistor

Conservation of the injection and transit time ratio in organic field-effect transistors: A thermally accelerated aging study

Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

Contact Info

Product

Resources

About