Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy

Abstract

Traps in SiC long-gate metal-semiconductor field-effect transistors (FATFETs) at different wafer positions have been characterized by deep-level transient spectroscopy (DLTS) based on capacitance (C-DLTS) or current (I-DLTS). Two major electron traps, Z 1/2 and V 1/2 , of energies 0.68 eV and 0.91 eV, respectively, are found mainly in the SiC buffer layer, and several hole-like traps appear in the surface or interface regions. In some regions of the wafer, an electron trap EH 6/7 of energy 1.77 eV is prominent. Trap EH 6/7 as well as the hole-like traps are not uniformly distributed on the wafer.