Traveling-Wave Metal/Insulator/Metal Diodes for Improved Infrared Bandwidth and Efficiency of Antenna-Coupled Rectifiers

Grover, Sachit; Dmitriyeva, Olga; Estes, Mike; Moddel, Garret

doi:10.1109/tnano.2010.2051334

Cited by 92 publications

(59 citation statements)

References 31 publications

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“…This suggests that if the antenna is very close to the diode, it can reduce losses 116 . In Travelling Wave (TW) MIM rectenna design, a MIM junction is created between the top and bottom bow-tie antenna 134,178 (Figure 16a). This allows the diode to rectify the absorbed radiation at this MIM junction.…”

Section: Alternative Structuresmentioning

confidence: 99%

“…Nevertheless, designing the best rectenna architecture is as equally important as optimising its two main constituents. There are many publication on antenna-coupled rectifiers used for optical 94,172,[218][219][220] or infrared 108,134,173,176,177,[221][222][223] sensing whereas, to the best of our knowledge, there is no antenna-rectifier device reported to harvest electromagnetic energy at the high solar frequencies. The gap between sensing and harvesting lies in how efficiently the incoming signal is converted and this is what limits the realisation of a true working solar rectenna.…”

Section: Rectenna Designmentioning

confidence: 99%

“…This is a very useful approach, which must be applied to other MIM candidates for solar applications. An alternative concept was previously described (Figure 16), consisting of a MIM diode based on a travelling-wave structure, which although having a symmetrical configuration (Nb/Nb 2 O 5 /Nb), outperforms planar type MIM diodes by three orders of magnitude at µm wavelength 134 . One of the most important findings in this field is a method for characterising the electrical properties of MIM devices by nanoindentation and later a bent wire technique suggested by Periasamy et al 149,[184][185][186][187] .…”

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confidence: 99%

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The rectenna device: From theory to practice (a review)

Donchev

Pang

Gammon

et al. 2014

MRS Energy & Sustainability

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The Rectenna (RECTifying antENNA), which was first demonstrated by William C. Brown in 1964 as a receiver for microwave power transmission, is now increasingly researched as a means of harvesting solar radiation. Tapping into the growing photovoltaic market, the attraction of the rectenna concept is the potential for devices that, in theory, are not limited in efficiency by the Shockley-Queisser limit. In this review, the history and operation of this 40-year old device concept is explored in the context of power transmission and the ever increasing interest in its potential applications at THz frequencies, through the infra-red and visible spectra. Recent modelling approaches that have predicted controversially high efficiency values at these frequencies are critically examined. It is proposed that to unlock any of the promised potential in the solar rectenna concept, there is a need for each constituent part to be improved beyond the current best performance, with the existing nanometer scale antennas, the rectification and the impedance matching solutions all falling short of the necessary efficiencies at THz frequencies. Advances in the fabrication, characterisation and understanding of the antenna and the rectifier are reviewed, and common solar rectenna design approaches are summarised. Finally, the socio-economic impact of success in this field is discussed and future work is proposed.

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Section: Alternative Structuresmentioning

confidence: 99%

Section: Rectenna Designmentioning

confidence: 99%

mentioning

confidence: 99%

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The rectenna device: From theory to practice (a review)

Donchev

Pang

Gammon

et al. 2014

MRS Energy & Sustainability

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“…The use of metallic nanostructures as an optical antenna on a semiconductor material, such as silicon (Si), germanium (Ge) 8,10 , and graphene 11,12 , can enhance the photoresponse of a device, mainly from the strong near-field optical intensity around the metallic nanostructures further increasing the absorption of light in the semiconductors. Furthermore, the concept of using diodes to directly rectify the current induced by antenna structures for photodetection also has been reported 13,14 . These devices were typically using the micron-size antennas composed by a metalinsulator-metal (MIM) structure to guide surface plasmons into the high speed diodes for light detection in the IR regime.…”

mentioning

confidence: 99%

Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths

et al. 2014

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Although the concept of using local surface plasmon resonance based nanoantenna for photodetection well below the semiconductor band edge has been demonstrated previously, the nature of local surface plasmon resonance based devices cannot meet many requirements of photodetection applications. Here we propose the concept of deep-trench/thinmetal (DTTM) active antenna that take advantage of surface plasmon resonance phenomena, three-dimensional cavity effects, and large-area metal/semiconductor junctions to effectively generate and collect hot electrons arising from plasmon decay and, thereby, increase photocurrent. The DTTM-based devices exhibited superior photoelectron conversion ability and high degrees of detection linearity under infrared light of both low and high intensity. Therefore, these DTTM-based devices have the attractive properties of high responsivity, extremely low power consumption, and polarization-insensitive detection over a broad bandwidth, suggesting great potential for use in photodetection and on-chip Si photonics in many applications of telecommunication fields.

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“…Their (0.1-10) × 10 12 Hz frequency range is suitable for a wide variety of applications, such as wireless communications, spectroscopy, biomedical and molecular imaging and high-speed signal processing. Consequently, Gunn diodes [37,38], resonant tunnelling diodes [39,40], quantum cascade lasers [41,42] and emitters based on transistors [43,44] have been investigated for use in THz oscillators, and a high electron mobility transistor [45][46][47], an HBT [48,49] operated at several hundred GHz and a metal-insulator-metal THz detector [50,51] have been developed.…”

Section: Introductionmentioning

confidence: 99%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

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In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm −2 . They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

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Traveling-Wave Metal/Insulator/Metal Diodes for Improved Infrared Bandwidth and Efficiency of Antenna-Coupled Rectifiers

Cited by 92 publications

References 31 publications

The rectenna device: From theory to practice (a review)

The rectenna device: From theory to practice (a review)

Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

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