Tremendous enhancement of green emission from Er3+/In3+ co-doped β-Ga2O3 ultrawide bandgap semiconductors

Effects of oxygen vacancies on the optical and electrical performances of silicon-based Er doped Ga2O3 films

“…Gallium oxide (Ga 2 O 3 ), as an emerging ultra-wide bandgap semiconductor, has aroused extensive interest in the areas of power devices [1,2], solar-blind photodetectors [3][4][5], and optoelectronics [6,7], due to its wide bandgap of ∼4.8 eV as well as high critical breakdown field of ∼8 MV cm −1 . For the purpose of applying Ga 2 O 3 in different devices, oxygen vacancies (V O ), as one of the most common point defects within native Ga 2 O 3 , need to play important roles [8,9].…”