Trends in power semiconductor packaging

Desbiens, D.

doi:10.1109/esime.2005.1502760

Cited by 5 publications

(1 citation statement)

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“…Power VDMOS device has both the advantages of bipolar transistors and MOS devices with high input impedance, low loss, fast switching speed, driving power small, highly linear transconductance, good frequency characteristics and other characteristics. It is an ideal high-voltage and large-current power devices, widely used in the field of civil, military and electronics industry [1,2] . Vibration environment is a important factor which affects quality and reliability of product in the aerospace, military and industrial areas, such as the airflow momentum generated by the incentive flight, the engine vibration excitation as well as take off and landing, long-distance transmission and transport process random the vibrational excitation, the performance of device casing and chips can be changed by these incentive, the reliability of the device is reduced [3,4] .…”

Section: Introductionmentioning

confidence: 99%

The Influence of Vibration on the Performance of VDMOS Devices

Yin¹,

Gao²,

Chen³

et al. 2012

Proceedings of the 1st International Conference on Mechanical Engineering and Material Science

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In this paper, the package TO-220C VDMOS devices are tested under the conditions of variable frequency and fixed-frequency vibration and the influence of vibration on source current leakage I DS and transconductance g m of device are discussed. The changes of device casing and chip surface are observed by microscope and the failure mechanism of device is analyzed. The experimental results show that I DS and g m of device became smaller with the increase of variable frequency. When the vibration frequency reaches 320Hz, the values of I DS and g m reached device failure criterion. Because parameters of each layer material in cell are different, the distribution of strains among layers which is caused by vibration generates defect or crazes. With the increase of time of the fixed-frequency vibration, some cell appears micro-cracks which expand to more cells gradually, which lead to device failure, life of VDMOS becomes shorter.

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Section: Introductionmentioning

confidence: 99%