1996
DOI: 10.1002/cvde.19960020306
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Trends in precursor selection for MOCVD

Abstract: MOCVD has many promising advantages over physical processes but industrial applications are still sparse, probably because commercial availability of suitable precursors is limited. In this Research News article the stringent requirements for metal‐organic compounds for thermal MOCVD as well as for photo‐MOCVD and MOMBE are critically reviewed. In particular, the problem of carbon incorporation in deposited films and the use of single‐source precursors for multi‐element deposits are discussed.

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Cited by 55 publications
(37 citation statements)
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“…In the present work, the gaseous chemical species CH, CH 2 , CH 3 , CH 4 2 (N x C 1Àx ) and C were considered in the calculations. Their thermodynamic data were taken from a databank.…”
Section: Thermochemical Calculationsmentioning
confidence: 99%
See 1 more Smart Citation
“…In the present work, the gaseous chemical species CH, CH 2 , CH 3 , CH 4 2 (N x C 1Àx ) and C were considered in the calculations. Their thermodynamic data were taken from a databank.…”
Section: Thermochemical Calculationsmentioning
confidence: 99%
“…Thus, a single-source precursor allows a good control of the gas-phase composition up to the deposition zone and is useful for simplification of the reactor design and processing conditions. However, it appears from a recent critical review on the stringent requirements for metal-organic compounds suitable for MOCVD processes 2 that progress in the design of metal-organic precursors, and thence further development of MOCVD, both strongly depend on the knowledge of growth mechanisms. The thermal decomposition of metal-organic compounds can take place according to numerous mechanisms and a crucial problem is to control the reaction pathway which leads from the precursor to the thin film.…”
Section: Introductionmentioning
confidence: 98%
“…Two precursors were selected for chemical stability and low toxicity [12]. Trimethyl(methylcyclopentadienyl)platinum(IV), commonly referred to as MeCpPtMe 3 (Abcr) is widely used ( [8,9,[13][14][15]), relatively volatile ( [16]), and rather expensive.…”
Section: Cvd Precursorsmentioning
confidence: 99%
“…24 Among the various physicochemical properties, good volatility, non-toxicity and thermal stability during the sublimation step are considered essential properties for FBMOCVD. The processing conditions require compounds easily available in good yields, and deposition temperatures below 150°C.…”
Section: Choice Of the Precursorsmentioning
confidence: 99%