2017
DOI: 10.1002/ange.201705650
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Tri(pyrazolyl)phosphane als Vorstufen für die Synthese von stark emittierenden InP/ZnS‐Quantenpunkten

Abstract: Tri(pyrazolyl)phosphane werden als alternative kostengünstige und weniger toxische Phosphorquelle in der Synthese von InP/ZnS‐Quantenpunkten (QDs) eingesetzt. Ausgehend von ihnen können langzeitstabile (>6 Monate) P(OLA)3‐Stammlösungen (OLAH=Oleylamin) synthetisiert werden, aus denen sich die entsprechenden Pyrazole einfach zurückgewinnen lassen. P(OLA)3 fungiert in der Synthese von stark emittierenden InP/ZnS‐QDs sowohl als Phosphorquelle als auch als Reduktionsmittel. Die erhaltenen Kern/Schale‐Partikel zeic… Show more

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Cited by 2 publications
(3 citation statements)
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“…Due to the high reaction temperatures an alloying process near the interface of the core and shell material shifts the (111) reflexes toward the pure zinc‐containing shell material. This can be explained by a partial migration of zinc ions into the InAs core region, as it is also observed in the synthesis of InP/ZnS QDs . TEM measurements of the resulting spherical InAs/ZnS QDs exhibit an increase in the nanoparticle size compared to the original core particles and confirms additionally the growth of a ZnS protective layer (Figure S4, Supporting Information).…”
Section: Resultssupporting
confidence: 59%
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“…Due to the high reaction temperatures an alloying process near the interface of the core and shell material shifts the (111) reflexes toward the pure zinc‐containing shell material. This can be explained by a partial migration of zinc ions into the InAs core region, as it is also observed in the synthesis of InP/ZnS QDs . TEM measurements of the resulting spherical InAs/ZnS QDs exhibit an increase in the nanoparticle size compared to the original core particles and confirms additionally the growth of a ZnS protective layer (Figure S4, Supporting Information).…”
Section: Resultssupporting
confidence: 59%
“…In recent years group III–V semiconductor materials gained tremendous attention as less toxic surrogates for group II–VI nanomaterials in optoelectronic devices . Thereby, InAs QDs are one of the most promising candidates for near infrared (NIR) and short‐wave infrared applications, such as bioimaging, photovoltaics, photodetectors, and lasers .…”
Section: Introductionmentioning
confidence: 99%
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