Trial of Ga-doping on ZnO Nanoparticles by Thermal Treatment with Ga₂O₃ Nanoparticles

Abstract

Direct Ga-doping into ZnO nanoparticles (NPs) were tried by thermal treatment mixed with Ga 2 O 3 particles. Residual Ga 2 O 3 particles were completely removed by appropriate centrifugation process. To confirm the Ga-doping, variations of sheet resistances for sprayed NP-layers on glass substrates were investigated, showing successful and dramatic reduction from GΩ sq −1-order to sub-kΩ sq −1. The minimum sheet resistance reached to 225 Ω sq −1. From X-ray diffraction and X-ray photoelectron spectroscopy analyses, it can be concluded that Ga atoms diffused from Ga 2 O 3 into ZnO-NPs in the thermal treatment process, and some of them substituted for Zn atoms and were activated as donors. These results can contribute to continuous advance of ZnO-NP-based thin-film-transistor fabrication technique.

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

“…51,52 The Ga 3d 5/2 peak coincides with β-Ga 2 O 3 , and the region enclosed by this line corresponds to variations in Ga content in GZO films. 52 In Figure 7e, the O 1s core energy level spectra of the thin films exhibit nearly identical spectral shapes. These spectra can be divided into two Gaussian components, namely, the O I and O II peaks.…”

“…The Ga 3d bands (Figure 7d) exhibit an overlap between the Ga 3d of the Ga− O bond and the O 2s core level, resulting in the Ga 3d 5/2 peak of 20.35 eV and the O 2s peak at 22.20 eV. 51,52 The Ga 3d 5/2 peak coincides with β-Ga 2 O 3 , and the region enclosed by this line corresponds to variations in Ga content in GZO films. 52 In Figure 7e, the O 1s core energy level spectra of the thin films exhibit nearly identical spectral shapes.…”

Demonstration and Evaluation of p‐Type and n‐Type ZnO Nanoparticles‐Based Homojunction UV Light‐Emitting Diodes

“…The average size of ZnO NPs was about 150 nm as reported in our previous research. [ 25 ] For the spray coating process, we used n‐ZnO NPs dispersions. The Sprayed NPs were sintered before aggregation occurred to make a denser NPs film by using a hot plate during the spray process.…”

“…The temperature was increase from room temperature to 900 °C within 10 min, and after 60 min thermal treatment, the samples were cooled down to less than 40 °C in 2 h. The detailed experimental procedures were discussed in the research article. [ 25 ]…”

“…The temperature was increase from room temperature to 900 C within 10 min, and after 60 min thermal treatment, the samples were cooled down to less than 40 C in 2 h. The detailed experimental procedures were discussed in the research article. [25] We designed two types of ZnO NPs LEDs. One type of LED had a N-doped p-ZnO NP layer on the GZO (Ga-doped ZnO) transparent conductive film and another type had a N-doped p-ZnO NP layer and a Ga-doped n-ZnO NP layer on the GZO film as displayed in Figure 6a,b respectively.…”