Quarter-wave OLEDS are microcavity devices that can operate in the low finesse limit and achieve high efficiency (> 300 lm/W) by using interference to reduce the onset current for the transition to stimulated emission. In this work we study the transition to stimulated emission and compare the kinetics and electrical properties of conventional and quarter-wave devices. We show that suppression of spontaneous emission into the vertical mode can result in a sharp transition to stimulated emission at (γ/eV a ) I ∼ N SE /τ sp , where N SE /τ sp is determined by optical parameters, and we find a previously observed electrical signature for the transition where the excited state population becomes fixed at low current density. We then study the role of loss mechanisms in the quarter-wave configuration and conclude with some requirements for practical devices.
I. INTRODUCTIONLight production in organic light emitting diodes (OLEDS) comprises a broad set of topics spanning material properties, electrical, spectral and photochemical processes, and classical and quantum optics.[1] OLEDS are typically formed by layers of organic and metallo-organic materials deposited between two electrodes. Charge is injected as holes and electrons which then migrate inwards and recombine to form excited states that can then be quenched, undergo intersystem crossing, migrate, or relax and produce light, some of which exits from a vertical mode as useful light and some of which may go into other modes in the device and substrate and exit as wasted light and heat. There is often a wavelength scale separation between two parallel reflective interfaces so that the device formally meets the definition of a microcavity.[2] While developments in materials and device architecture have contributed to improvements in internal efficiency and outcoupling, important issues remain in efficiency, roll-off and device lifetime. [3,4]. An avenue for improvement in these areas is the role of device architecture in manipulating the kinetics of light production.As is well known, emission of light results when an electronic transition is able to couple to an allowed mode.[5-7] A cavity is thus able to enhance or suppress emission [8,9] and alter the kinetics and behavior of the device. [10,11] An emitter located at an odd multiple of 1/4 wavelength