Trimethylaluminum as a Reducing Agent in the Atomic Layer Deposition of Ti(Al)N Thin Films

Juppo, Marika; Alén, Petra; Ritala, Mikko; Leskelä, Markku

doi:10.1002/1521-3862(200109)7:5<211::aid-cvde211>3.0.co;2-l

Cited by 49 publications

(47 citation statements)

References 14 publications

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“…Similar results have been reported by other researchers when TiCl 4 is employed in ALD. 14,15 The composition of C is approximately unchanged in the range of 36%∼42%. The composition of Al dramatically increases from 13% to 35% while the composition of Ti decreases markedly from 45% to 25% when the temperature increases from 250 • C to 375 • C. This is because more TEA decomposes to Al at higher temperatures, which contribute to higher Al content and comparatively lower Ti content.…”

Section: Resultsmentioning

confidence: 99%

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors

Xiang¹,

Ding²,

Du³

et al. 2016

ECS J. Solid State Sci. Technol.

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N type metal gate TiAlC film was grown by thermal atomic layer deposition (ALD) technique using titanium tetrachloride (TiCl 4 ) and triethylaluminum (TEA) as precursors for the first time. The physical characteristics of the TiAlC film such as chemical composition, growth rate and crystal morphology were estimated by X-ray photoemission spectroscopy, X-ray reflectivity and X-ray diffraction, respectively. The electrical characteristics of the TiAlC films were investigated by using metal-oxide-semiconductor (MOS) capacitor structure. The effective workfunction can be tunable from 4.46 eV to 4.24 eV by adjusting the growth temperature and the film thickness. The effective workfunction of 4.24 eV is close to the Si conduction band edge. These results show that the TiAlC film is a promising gate metal candidate for the application in FinFET device of 22 nm technology node and beyond.In order to achieve high performance and high-density integration, high-k material and metal gate were introduced into complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs) when the feature size scales down to 45 nm. 1 As the feature size continues shrinking to 22 nm technology node, Fin field-effect-transistor (FinFET) structure with high aspect ratio was integrated into CMOS in order to suppress the short-channel effects. 2,3 One challenge for successful FinFET fabrication beyond 22 nm node is the film conformality and gap filling for structures with high aspect ratio. Atomic layer deposition (ALD) was widely regarded as the best method to overcome the above challenge due to its conformal filling capability with thickness down to the nanometer range. 4,5 However, using ALD to grow metal gate with low workfunction is difficult because of limited precursors. Cho et al. got TiC x N y and TaC x N y film with workfunction of 4.66 eV and 4.37 eV respectively. 6,7 Jeon et al. got TiC-TiN compound with workfunction of 4.6 eV. 8 Ragnarsson et al. used a ALD TiAl process to get conformal low threshold voltage (Vt) bulk FinFET devices. 9 Kim et al. and Triyoso et al. got ALD TiC and ALD TaC y films with tunable effective work function. 10,11 These films were grown by plasma enhanced ALD (PEALD) process. However, thermal ALD metal with low work function is rarely reported.In our previous work, we have successfully gotten thermal ALD TiAlC with low effective work function (EWF) of 4.49 eV by using titanium tetrachloride (TiCl 4 ) and trimethylaluminum (TMA). 12 It is found that doping Al into metal carbide can decrease the EWF of the metal gate. Triethylaluminum (TEA) is a metal organic precursor with special β-hydrogen, which can lead to H 2 elimination. The H 2 elimination will generate Al intermediate, which can decompose more easily at high temperature and further enhance Al doping into the final product. So in order to get lower EWF metal, in this paper, using new precursors TiCl 4 and TEA, we got N type metal gate TiAlC film by thermal ALD. The EWF of the newly grown TiAlC can be much lower. It can be tunable from 4.46 e...

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Section: Resultsmentioning

confidence: 99%

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors

Xiang¹,

Ding²,

Du³

et al. 2016

ECS J. Solid State Sci. Technol.

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“…The trans isomer of the azobenzene moiety exhibits as trong p-p* absorption peak around 333 nm, while for the cis isomer aw eak (forbidden) n-p*b and is expected at 550. [39,40] Before investigating the guest absorption capability of the iron-azobenzene thin films,w ee laborated our ALD/MLD process by optimizing the deposition parameters in more detail (see the Supporting Information). [34] Also,i ti si nteresting to note as shown in Figure 1d that the absorbance at 333 nm increases linearly with the number of ALD/MLD cycles applied, in an excellent agreement with the ideally expected regular film growth.…”

mentioning

confidence: 99%

Atomic/Molecular Layer Deposited Iron–Azobenzene Framework Thin Films for Stimuli‐Induced Gas Molecule Capture/Release

2019

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The atomic/molecular layer deposition (ALD/ MLD) technique provides an elegant way to growc rystalline metal-azobenzene thin films directly from gaseous precursors; the photoactive azobenzenel inkers thus form an integral part of the crystal framework. Reversible water capture/release behavior for these thin films can be triggered through the trans-cis photoisomerization reaction of the azobenzene moieties in the structure.T he ALD/MLD approach could open up new horizons for example,f or the emerging fields of remotely controlled drug delivery and gas storage.

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“…The XPS data also reveal the presence of Cl contamination (ca. 1 at %), which is typical for ALD and MLD films grown from metal chloride precursors in particular at low deposition temperatures …”

Section: Figurementioning

confidence: 89%

Atomic/Molecular Layer Deposited Iron–Azobenzene Framework Thin Films for Stimuli‐Induced Gas Molecule Capture/Release

2019

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The atomic/molecular layer deposition (ALD/MLD) technique provides an elegant way to grow crystalline metal–azobenzene thin films directly from gaseous precursors; the photoactive azobenzene linkers thus form an integral part of the crystal framework. Reversible water capture/release behavior for these thin films can be triggered through the trans–cis photoisomerization reaction of the azobenzene moieties in the structure. The ALD/MLD approach could open up new horizons for example, for the emerging fields of remotely controlled drug delivery and gas storage.

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Trimethylaluminum as a Reducing Agent in the Atomic Layer Deposition of Ti(Al)N Thin Films

Cited by 49 publications

References 14 publications

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors

Atomic/Molecular Layer Deposited Iron–Azobenzene Framework Thin Films for Stimuli‐Induced Gas Molecule Capture/Release

Atomic/Molecular Layer Deposited Iron–Azobenzene Framework Thin Films for Stimuli‐Induced Gas Molecule Capture/Release

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Trimethylaluminum as a Reducing Agent in the Atomic Layer Deposition of Ti(Al)N Thin Films

Cited by 49 publications

References 14 publications

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl4and TEA as Precursors

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl4and TEA as Precursors

Atomic/Molecular Layer Deposited Iron–Azobenzene Framework Thin Films for Stimuli‐Induced Gas Molecule Capture/Release

Atomic/Molecular Layer Deposited Iron–Azobenzene Framework Thin Films for Stimuli‐Induced Gas Molecule Capture/Release

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Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors