Trion dephasing by electron scattering in GaAs/AlAs quantum wells

Manassen, A.; Cohen, E.; Ron, A.; Linder, E.; Pfeiffer, L. N.

doi:10.1364/josab.13.001372

J. Opt. Soc. Am. B

1996

DOI: 10.1364/josab.13.001372

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Trion dephasing by electron scattering in GaAs/AlAs quantum wells

A. Manassen

E. Cohen

A. Ron

et al.

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Cited by 3 publications

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High‐Temperature Excitonic Condensation in 2D Lattice

Xu,

Wang,

et al. 2024

Advanced Science

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Exploration of high‐temperature bosonic condensation is of significant importance for the fundamental many‐body physics and applications in nanodevices, which, however, remains a huge challenge. Here, in combination of many‐body perturbation theory and first‐principles calculations, a new‐type spatially indirect exciton can be optically generated in two‐dimensional (2D) Bi2S2Te because of its unique structure feature. In particular, the spin‐singlet spatially indirect excitons in Bi2S2Te monolayer are dipole/parity allowed and reveal befitting characteristics for excitonic condensation, such as small effective mass and satisfied dilute limitation. Based on the layered Bi2S2Te, the possibility of the high‐temperature excitonic Bose–Einstein condensation (BEC) and superfluid state in two dimensions, which goes beyond the current paradigms in both experiment and theory, are proved. It should be highlighted that record‐high phase transition temperatures of 289.7 and 72.4 K can be theoretically predicted for the excitonic BEC and superfluidity in the atomic thin Bi2S2Te, respectively. It therefore can be confirmed that Bi2S2Te featuring bound bosonic states is a fascinating 2D platform for exploring the high‐temperature excitonic condensation and applications in such as quantum computing and dissipationless nanodevices.

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High‐Temperature Excitonic Condensation in 2D Lattice

Xu,

Wang,

et al. 2024

Advanced Science

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Optical properties of charged excitons in two-dimensional semiconductors

Glazov

2020

The Journal of Chemical Physics

109

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Strong Coulomb interaction in atomically thin transition metal dichalcogenides makes these systems particularly promising for studies of excitonic physics. Of special interest are the manifestations of the charged excitons, also known as trions, in the optical properties of two-dimensional semiconductors. In order to describe the optical response of such a system, the exciton interaction with resident electrons should be explicitly taken into account. In this paper, we demonstrate that this can be done in both the trion (essentially, few-particle) and Fermi-polaron (many-body) approaches, which produce equivalent results, provided that the electron density is sufficiently low and the trion binding energy is much smaller than the exciton one. Here, we consider the oscillator strengths of the optical transitions related to the charged excitons, fine structure of trions, and Zeeman effect, as well as photoluminescence of trions illustrating the applicability of both few-particle and many-body models.

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Stable electroluminescence in ambipolar dopant-free lateral p–n junctions

Tian,

Sfigakis,

Shetty

et al. 2023

Applied Physics Letters

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Dopant-free lateral p–n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been the unwanted charge accumulation at the p–n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or due to inhibition of p–n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p–n junctions with electroluminescence linewidths among the narrowest (<1 meV; <0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes) as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence.

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Trion dephasing by electron scattering in GaAs/AlAs quantum wells

Cited by 3 publications

References 16 publications

High‐Temperature Excitonic Condensation in 2D Lattice

High‐Temperature Excitonic Condensation in 2D Lattice

Optical properties of charged excitons in two-dimensional semiconductors

Stable electroluminescence in ambipolar dopant-free lateral p–n junctions

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