Trion-electron scattering in GaAs/AlAs quantum wells

Manassen, A.; Harel, R.; Cohen, E.; Ron, A.; Linder, E.; Pfeiffer, L. N.

doi:10.1016/0039-6028(96)00441-4

Cited by 2 publications

(8 citation statements)

References 9 publications

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“…It is dominated by a broad and featureless band, associated with the recombination between large density of 2DEG (generated with ENW) and holes in the WW. It should be noted that this plasma-like band extends to lower energy than the corresponding exciton and trion, due to the re-normalization of the conduction band, occurring at large ne [7]. The weak band at 1.515 eV corresponds to a bulk GaAs substrate and will not be discussed any further.…”

Section: Resultsmentioning

confidence: 99%

“…It is seen that a modulation of ne leads to difference spectra resolving the exciton (high energy and positive), trion (negative) and distinct plasma (low energy and positive) bands. The quenching of the trions population corresponds to their dissociation under intense flux of ne and their conversion into excitons and plasma species [7].…”

Section: Resultsmentioning

confidence: 99%

“…The influence of those gases are studied in mixed type I-type II quantum wells (MTQW) structure, enabling the control of the electron-density (he) between 1010_ 1011 carriers/cm2 by optical pumping [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…The present study describes our attempts to follow the interactions of the 2DEG and 2DHG with other photogenerated species. The results revealed the existence of the following events: (a) attachment of an excess electron to an existing exciton in the WW, to form a negatively charged specie, named a trion [4,5]; (b) direct recombination of an ensemble of free electrons with an existing hole within the WW, forming a plasma-like emission band [5,7]; (c) indirect recombination between electron in the barrier X state and the 2DHG in the NW. The present study utilized double beam photoluminescence (PL) and microwave modulated PL (MMPL) for the study of the aforementioned processes.…”

Section: Introductionmentioning

confidence: 99%

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A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence

et al. 1999

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Abstract. Mixed types I-type II multiple quantum wells structures consist of alternating narrowand wide GaAs wells (WW and NW), separated by AlAs barriers. Transfer of electrons from the narrow-to the wide well results in the formation of two-dimensional electron and hole gases (2DEG and 2DHG) at the WW and NW, respectively. The present study investigated the influence of the 2DEG and the 2DHG on the optical properties of the materials. The study utilized two modulations techniques: double beam photoluminescence and microwave modulated PL, offering high-resolution spectroscopy, control of the density of the gases and their kinetic energy. The results showed that the existence of the low density 2DEG in the wide well cause the formation of trions or plasma-like recombination. In addition, electrons transfer through the barrier leads to a barrier-NW indirect recombination emission. The latter is influenced by an electrostatic potential induced by the two-dimensional gases.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence

et al. 1999

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“…The optical properties of quantum well (QW) structures, containing two-dimensional electron and hole gases (2DEG and 2DHG), have a scientific and technological importance [1,2]. The influence of those gases are studied in mixed types I-II quantum well (MTQW) structures, enabling the control of the electron density (n e ) between 10 10 -10 11 carriers cm −2 by optical pumping [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

A study of semiconductor quantum structures by microwave modulated photoluminescence

et al. 2002

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Mixed types I-II multiple quantum well structures consist of alternating narrow and wide GaAs wells (NW and WW), separated by AlAs barriers. The transfer of electrons from the NW to the WW results in the formation of two-dimensional electron and hole gases (2DEG and 2DHG) at the WW and NW, respectively. The present study investigated the influence of the 2DEG and the 2DHG on the optical properties of the materials. The study utilized double beam photoluminescence (PL) and microwave modulated PL, offering high-resolution spectroscopy and control of the density of the gases and their kinetic energy. The results have shown that the existence of the low-density 2DEG in the WW causes the formation of trions or plasma-like recombination. In addition, electrons transfer through the barrier leading to a barrier-NW indirect recombination emission. The latter is influenced by an electrostatic potential induced by the two-dimensional gases.

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Trion-electron scattering in GaAs/AlAs quantum wells

Cited by 2 publications

References 9 publications

A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence

A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence

A study of semiconductor quantum structures by microwave modulated photoluminescence

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