Trion emission from frozen p-n junctions in networks of electrolyte-gated (6,5) single-walled carbon nanotubes

Yumin, Abdurrahman Ali El; Zorn, Nicolas; Berger, F.; Heimfarth, Daniel; Zaumseil, Jana

doi:10.1016/j.carbon.2022.11.025

Cited by 2 publications

(5 citation statements)

References 61 publications

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“…This energetic separation (Δ E E 11 – T ) is the sum of the singlet–triplet exciton exchange splitting and the trion binding energy that scale inversely with the squared nanotube diameter and the diameter, respectively. , While excess charge carriers promote the creation of trions (charged excitons), they also cause nonradiative decay of excitons due to Auger-type quenching. , Consequently, the observation of trion emission and its intensity relative to excitonic emission (T/E 11 ) should be indicative of SWCNT doping levels and might be used as an optical probe for carrier density . Further, trions are often observed but highly undesired in electroluminescent devices, ,, as they lead to additional emission peaks and thus reduced spectral purity as well as lower external quantum efficiency. Hence, their suppression or at least control is important for carbon nanotube-based optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

“… 19 , 20 Consequently, the observation of trion emission and its intensity relative to excitonic emission (T/E 11 ) should be indicative of SWCNT doping levels and might be used as an optical probe for carrier density. 21 Further, trions are often observed but highly undesired in electroluminescent devices, 18 , 22 , 23 as they lead to additional emission peaks and thus reduced spectral purity as well as lower external quantum efficiency. Hence, their suppression or at least control is important for carbon nanotube-based optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Dielectric Environment on Trion Emission from Single-Walled Carbon Nanotube Networks

et al. 2023

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Trions are charged excitons that form upon optical or electrical excitation of low-dimensional semiconductors in the presence of charge carriers (holes or electrons). Trion emission from semiconducting single-walled carbon nanotubes (SWCNTs) occurs in the near-infrared and at lower energies compared to the respective exciton. It can be used as an indicator for the presence of excess charge carriers in SWCNT samples and devices. Both excitons and trions are highly sensitive to the surrounding dielectric medium of the nanotubes, having an impact on their application in optoelectronic devices. Here, the influence of different dielectric materials on exciton and trion emission from electrostatically doped networks of polymersorted (6,5) SWCNTs in top-gate field-effect transistors is investigated. The observed differences of trion and exciton emission energies and intensities for hole and electron accumulation cannot be explained with the polarizability or screening characteristics of the different dielectric materials, but they show a clear dependence on the charge trapping properties of the dielectrics. Charge localization (trapping of holes or electrons by the dielectric) reduces exciton quenching, emission blue-shift and trion formation. Based on the observed carrier type and dielectric material dependent variations, the ratio of trion to exciton emission and the exciton blue-shift are not suitable as quantitative metrics for doping levels of carbon nanotubes.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of Dielectric Environment on Trion Emission from Single-Walled Carbon Nanotube Networks

et al. 2023

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“…At a fixed injection current, the imbalance of electrons and holes at large back-gate voltages causes a low probability of the exciton formation as well as the increasing Augur recombination and thus the suppression of the EL. Ideally, the more balanced the electrons and the holes, the higher the EL efficiency will be . Shown in Figure f is the EQE of the device as a function of the back-gate voltage V gs .…”

Section: Resultsmentioning

confidence: 99%

“…Ideally, the more balanced the electrons and the holes, the higher the EL efficiency will be. 15 Shown in Figure 3f is the EQE of the device as a function of the back-gate voltage V gs . At the small V gs ranging from ∼0 to ∼30 V, the EQE reaches the highest value of about 0.005%, which is lower than those in early reports.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Infrared light sources based on chirality-sorted SWCNT films have been demonstrated experimentally, but the device performance was limited by the low luminescent quantum yield of SWCNTs . To improve the emission efficiency, various strategies have been explored recently, including the utilization of trion electroluminescence (EL), − defect emissions of functionalized SWCNTs, − and enhancement cavities. − …”

Section: Introductionmentioning

confidence: 99%

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Infrared Light-Emitting Diodes Based on Chirality-Sorted Carbon Nanotube Films

Han,

Li,

et al. 2024

ACS Appl. Mater. Interfaces

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An important goal in carbon nanotube optoelectronics is to achieve a high-performance near-infrared light source. But there are still many challenges such as the purity of single-walled carbon nanotube (SWCNT) chirality, nonradiative defects, thin-film quality, and device structure design. Here, we realize infrared light-emitting diodes (LEDs) based on chirality-sorted (10, 5) SWCNT network films, which operate at a low bias voltage and emit at a telecom O band of 1290 nm. Asymmetric palladium (Pd) and hafnium (Hf) contacts are used as electrodes for hole and electron injection, respectively. However, the large Schottky barrier at the interface of the SWCNTs and the Hf electrode, primarily resulting from the polymer wrapped on the nanotube surface during the sorting process, leads to inefficient electron injection and thus a low electroluminescence efficiency. We find that the efficiency of electron injection can be improved by the local doping of the nanotubes with dielectric layers of YO X -HfO 2 , which reduces the Schottky barrier at the SWCNT/Hf interface. Accordingly, the (10, 5) SWCNT film-based LED achieves an external quantum efficiency of larger than 0.05% without any optical coupling structure. With further improvement, we expect that such an infrared light source will have great application potential in the carbon nanotube monolithic optoelectronic integrated system and on-chip optical interconnection, especially in the field of short-distance optical fiber communications and data center.

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Trion emission from frozen p-n junctions in networks of electrolyte-gated (6,5) single-walled carbon nanotubes

Cited by 2 publications

References 61 publications

Impact of Dielectric Environment on Trion Emission from Single-Walled Carbon Nanotube Networks

Impact of Dielectric Environment on Trion Emission from Single-Walled Carbon Nanotube Networks

Infrared Light-Emitting Diodes Based on Chirality-Sorted Carbon Nanotube Films

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