Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

Arbiol, Jordi; Estradé, S.; Prades, Joan Daniel; Cirera, A.; Furtmayr, Florian; Stark, Christoph; Läufer, Andreas; Stutzmann, M.; Eickhoff, Martin; Gass, Mhairi; Bleloch, Andrew; Peiró, Francesca; Morante, J.R.

doi:10.1088/0957-4484/20/14/145704

Cited by 91 publications

(84 citation statements)

References 51 publications

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“…2b is a scanning transmission electron microscopy bright-field (STEM-BF) image, illustrating lattice fringes from defect-free single crystalline nanowire (Methods section). The distance between the two adjacent fringes is about B0.518 nm that corresponds to the o00014 direction, further confirming that the nanowires are grown along the c axis, with their sidewalls being nonpolar m-planes 26 . Room temperature photoluminescence (PL) measurement clearly shows a single optical emission peak at B365 nm, corresponding to the bandgap of GaN (3.4 eV) (Methods section and Supplementary Fig.…”

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confidence: 53%

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

et al. 2014

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Solar water splitting is one of the key steps in artificial photosynthesis for future carbonneutral, storable and sustainable source of energy. Here we show that one of the major obstacles for achieving efficient and stable overall water splitting over the emerging nanostructured photocatalyst is directly related to the uncontrolled surface charge properties. By tuning the Fermi level on the nonpolar surfaces of gallium nitride nanowire arrays, we demonstrate that the quantum efficiency can be enhanced by more than two orders of magnitude. The internal quantum efficiency and activity on p-type gallium nitride nanowires can reach B51% and B4.0 mol hydrogen h À 1 g À 1 , respectively. The nanowires remain virtually unchanged after over 50,000 mmol gas (hydrogen and oxygen) is produced, which is more than 10,000 times the amount of photocatalyst itself (B4.6 mmol). The essential role of Fermi-level tuning in balancing redox reactions and in enhancing the efficiency and stability is also elucidated.

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confidence: 53%

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

et al. 2014

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“…Arbiol et al presented TEM studies on the structural properties of Mg-doped GaN nanorods grown by MBE. 70 Triple-twin domains were found in Mg doped GaN nanorods and the density of such structure increases with increasing Mg concentration. The high concentration of misplaced atoms from the triple-twin domains induces local changes in the crystal structure, which is equivalent to the insertion of three non-relaxed ZB atomic cells.…”

Section: Influence Of Doping On Morphology Of Gan Nanorodsmentioning

confidence: 98%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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“…It is found under special conditions such as high pressures and in the nanoscale form such as nanoparticles and nanowires. [37][38][39][40][41][42] To our knowledge, the phonon spectrum of wurtzite GaAs has not been calculated or measured yet. As it has been shown in the case of GaN and SiC, the main characteristics of the phonon dispersion of wurtzite GaAs can be deduced in an approximated way thanks to the straight forward relation between the two structures.…”

Section: ͑2͒mentioning

confidence: 99%

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

et al. 2009

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Polarization-dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E 1 ͑TO͒ at 267 cm −1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm −1 of the E 1 ͑TO͒. The transversal optical mode related to the wurtzite structure, E 2 H , is measured between 254 and 256 cm −1 , depending on the wurtzite content. The azimuthal dependence of E 2 H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E 1 ͑TO͒ and E 2 H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on ͕110͖ facets is presented.

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Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

Cited by 91 publications

References 51 publications

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

GaN based nanorods for solid state lighting

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

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