Tristable TaOx-based memristor by controlling oxygen vacancy transportion based on valence transition mechanism

Cai, Qingfeng; Duan, Zhikui; Chen, Jianwen; Wang, Xiucai; Zhu, Wenbo; Liu, Si; Xiao, Peng; Yu, Xinmei

doi:10.1016/j.ceramint.2024.04.201

Ceramics International

2024

DOI: 10.1016/j.ceramint.2024.04.201

|View full text |Cite

Tristable TaOx-based memristor by controlling oxygen vacancy transportion based on valence transition mechanism

Qingfeng Cai,

Zhikui Duan,

Jianwen Chen

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide

Liao,

Xie,

Song

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

In recent years, memristors have garnered significant attention, particularly those based on the oxygen vacancy-driven filamentary conduction mechanism. However, studies utilizing single-crystal materials for memristors remain scarce. This study investigates memristive effect of Se-implanted β-Ga2O3 single-crystal material, fabricated through ion implantation. X-ray photoelectron spectroscopy and depth profiling revealed that Se doping significantly increased the concentration of oxygen vacancies, crucial for resistive switching (RS). Electrical testing demonstrated stable and repeatable resistive switching behavior, attributed to the filamentary conduction mechanism driven by oxygen vacancies. These findings highlight the potential of ion implantation for tuning the surface properties of Ga2O3-based memristors, advancing their application in next-generation electronic devices.

show abstract

Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide

Liao,

Xie,

Song

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Tristable TaOx-based memristor by controlling oxygen vacancy transportion based on valence transition mechanism

Cited by 1 publication

References 27 publications

Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide

Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide

Contact Info

Product

Resources

About