Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films

Yan, Xiaobing; Chen, Y. F.; Hao, Hua; Liu, Q.; Zhang, E. P.; Shi, S. S.; Lou, Jingan

doi:10.1063/1.4893601

Cited by 13 publications

(4 citation statements)

References 26 publications

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“…The reason may be that compared with the amorphous region, the carriers tend to migrate along the grain boundary. , However, the crystalline regions were randomly distributed in the pristine SF films, and the random carrier migration paths could have resulted in unstable resistance switching. As reported by Yan et al ., metallic ions can serve as a nucleus to induce the growth of crystals . Simultaneously, the introduction of metallic ions can improve memristor performance. , …”

Section: Resultsmentioning

confidence: 99%

“…As reported by Yan et al, metallic ions can serve as a nucleus to induce the growth of crystals. 44 Simultaneously, the introduction of metallic ions can improve memristor performance. 45,46 On the above bases, we fabricated SF-based functional layers containing different Ag contents and then studied their impact on the resistance switching performance.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin

Zhang

Han

Fan

et al. 2021

ACS Biomater. Sci. Eng.

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Biomemristors have attracted significant attention because of their potential applications in logic operations, nonvolatile memory, and synaptic emulators, thus leading to the urgent need to improve memristive performance. In this work, a silk fibroin (SF)-based memristor, integrated with both low power and low operating current simultaneously, has been reported. Doping the SF with Ag and an ethanol-based post-treatment promote microcrystal formation in the bulk of the SF. This induces carrier transport along fixed, short paths and results in a low set voltage, low operating current, and high memristive stability. Such performances can greatly reduce power consumption and heat generation, beneficial for the accuracy and durability of memristor devices. The memristive mechanism of SF-based memristors with different Ag contents is the space-charge-limited conduction (SCLC) mechanism. In addition, the nonlinear transmission property of SF-based memristors suggests useful applications in bioelectronics.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin

Zhang

Han

Fan

et al. 2021

ACS Biomater. Sci. Eng.

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“…After a forward voltage is applied to the device, O vacancies are formed in the intermediate layer. The loss of O atoms may be due to the thermophoresis effect caused by Joule heating: a temperature gradient caused by the increased current drives the lighter ions away from the channel region . To confirm the increase of oxygen vacancies and valence change of elements of the whole functional layer below the Al electrode, the XPS at different depth of the device was analyzed.…”

Section: Resultsmentioning

confidence: 99%

A New Memristor with 2D Ti₃C₂T_x MXene Flakes as an Artificial Bio‐Synapse

Yan

Wang

Zhao

et al. 2019

Small

174

108

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Two‐dimensional (2D) materials have attracted extensive research interest in academia due to their excellent electrochemical properties and broad application prospects. Among them, 2D transition metal carbides (Ti3C2Tx) show semiconductor characteristics and are studied widely. However, there are few academic reports on the use of 2D MXene materials as memristors. In this work, reported is a memristor based on MXene Ti3C2Tx flakes. After electroforming, Al/Ti3C2Tx/Pt devices exhibit repeatable resistive switching (RS) behavior. More interestingly, the resistance of this device can be continuously modulated under the pulse sequence with 10 ns pulse width, and the pulse width of 10 ns is much lower than that in other reported work. Moreover, on the nanosecond scale, the transition from short‐term plasticity to long‐term plasticity is achieved. These two properties indicate that this device is favorable for ultrafast biological synapse applications and high‐efficiency training of neural networks. Through the exploration of the microstructure, Ti vacancies and partial oxidation are proposed as the origins of the physical mechanism of RS behavior. This work reveals that 2D MXene Ti3C2Tx flakes have excellent potential for use in memristor devices, which may open the door for more functions and applications.

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“…However forming-free bipolar resistive switching performance from the as-deposited nc-Si with Si dangling bond RRAM device has not been covered yet. Moreover, the in situ growth of silicon-based resistive materials on the silicon substrate will greatly increase the reliability of devices and provide a good platform for the industrialization of silicon-based memory devices [13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Hybrid channel induced forming-free performance in nanocrystalline-Si:H/a-SiNx:H resistive switching memory

Sun¹,

Ma²,

Tan³

et al. 2019

Nanotechnology

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The unique forming-free feature of Si-based resistive switching memory plays a key role in the industrialization of next generation memory in the nanoscale. Here we report on a new formingfree nanocrystalline-Si:H (nc-Si:H)/SiN x :H resistive switching memory that can be obtained by deposition of hydrogen diluted nc-Si on hydrogen plasma treated a-SiN x :H layer. It is found that nc-Si dots with areal density of 5.6×10 12 /cm 2 exist in nc-Si:H sublayer. Si dangling bonds (DBs) of volume density of 4.13×10 23 cm −3 are produced in the a-SiN x :H sublayer. Temperature dependent current characteristic and theoretical calculations further reveal that hybrid channel of nc-Si and Si dangling bonds are the origin of the forming-free performance of nc-Si:H/SiN x :H resistive switching memory, which obey the trap assisted tunneling model at the low resistance state and P-F model at the high resistance state. Our discovery of hybrid channel supplies a new way to make Si-based RRAM be used in high density memory in the future.

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Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films

Abstract: Articles you may be interested inMicrostructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

Cited by 13 publications

References 26 publications

Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin

Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin

A New Memristor with 2D Ti₃C₂T_x MXene Flakes as an Artificial Bio‐Synapse

Hybrid channel induced forming-free performance in nanocrystalline-Si:H/a-SiNx:H resistive switching memory

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Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films

Abstract: Articles you may be interested inMicrostructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

Cited by 13 publications

References 26 publications

Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin

Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin

A New Memristor with 2D Ti3C2Tx MXene Flakes as an Artificial Bio‐Synapse

Hybrid channel induced forming-free performance in nanocrystalline-Si:H/a-SiNx:H resistive switching memory

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Product

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A New Memristor with 2D Ti₃C₂T_x MXene Flakes as an Artificial Bio‐Synapse