True diffusion current of substrate ions as the rate-controlling factor of surface film growth

Abstract

A simple model of the surface film growth considering the “true diffusion” current of substrate ions as the rate‐controlling factor is presented. The resulting three‐parameter growth law reduces to the well‐known parabolic law for thick films. The model agrees with published experimental data for thermal oxidation of Cu, Fe, Si, and Al in oxygen atmosphere with 0.4 to 5.1% deviations.