True Zero Degree Incident Implants on VIISta3000

Abstract

The deliberate use of channeling to control depth profiles has come of age in the application to CMOS imaging sensor device manufacturing. In order to enable the true zero implant application on VIISta3000, we have optimized beam incidence angle control, using beam optics models and experimental measurements. The experiment measurement and the beam optics analysis results agree, showing a variation of less than 0.03° (1σ) across the wafer and from wafer to wafer. Achieving this accuracy in a manufacturing environment requires careful calibration and tight control of the collimator magnet and the mechanical scan system. In this paper we discuss the root cause of beam incidence angle variation on VIISta3000 and explain the calibration and optimization used to insure the consistent minimized beam incidence angle. We show experimental data, including ThermaWave and SIMS profiles.