Proceedings of 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors — PoS 2010
DOI: 10.22323/1.098.0018
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TSC studies on n- and p-type MCZ Si pad detectors irradiated with neutrons up to 1016n/cm2

Abstract: We report on the investigation of the radiation damage induced by neutron irradiation on both nand p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents (TSC) technique. Detectors have been irradiated with fast neutrons in the range 10 14-10 16 n/cm 2. Priming conditions have been studied in detail in order to investigate the residual electric field due to frozen charged traps after the priming step and its influence on the TSC emission. Zero bias TSC measurements have also bee… Show more

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