TSV filling with copper electro-deposition by using phenyl disulfide propane sodium

Abstract

Through Silicon Via (TSV) is a promising microelectronic interconnection technology in Three-dimensional integration (3D). Three-component additives are used for non-porous TSV filling. However, various experiments must be carried out to optimize the concentrations of various additives. To avoid this expensive process, Phenyl disulfide propane sodium (BSP) in the TSV filling is investigated and the correlation between the copper seed layer surface and molecular structure were simulated through molecular dynamics using materials studio software. It can be seen that the BSP concentration is 0.1 g/L, the inhibitor AESS is 1.0 g/L, the current density is 2 A/cm2 , and after 6 hours of electroplating, the TSV filling assumes a "V" growth mode, which can obtain a defect free TSV copper plating filling result.