Tunability in the Optical and Electronic Properties of ZnSe Microspheres via Ag and Mn Doping

Qiao, Fen; Kang, Rong; Liang, Qiao‐Mei; Cai, Yongqing; Bian, Jiming; Hou, Xiaoya

doi:10.1021/acsomega.9b01539

Cited by 61 publications

(18 citation statements)

References 29 publications

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“…Mn is a rich reserve and low-cost element with various oxidation states from +1 to +7, which make it suitable for doping. Indeed, it is widely used as an effective dopant, and the controllable influence of the Mn dopant on physicochemical properties − guarantees the extensive applications of Mn-doped materials, such as energy, − sensing, and catalysis. , The above considerations naturally inspire us to use Mn as a heteroatom dopant to boost NRR activity of TiO 2 , which has never been reported before. In this work, we report on the development of Mn-doped TiO 2 nanospheres for enhanced N 2 reduction electrocatalysis at ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

Modulating Oxygen Vacancies of TiO₂ Nanospheres by Mn-Doping to Boost Electrocatalytic N₂ Reduction

Chen

et al. 2021

ACS Sustainable Chem. Eng.

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Electrochemical N 2 reduction reaction (NRR) is an environmentally benign and sustainable approach for NH 3 synthesis under ambient conditions, which needs efficient electrocatalyst to meet the enormous challenge of activating the inert N 2 molecule. Recently, TiO 2 emerges as an active NRR electrocatalyst with advantages of abundance, nontoxicity, and high thermal stability. Heteroatom doping is an effective oxygen vacancy introduction strategy to manufacture unique electron and structure properties of metal oxides, which will greatly influence the catalysts' activity. In this work, we developed Mn-doped TiO 2 nanospheres (Mn-TiO 2 ) for electrochemical NRR. In 0.1 M Na 2 SO 4 , Mn-TiO 2 shows a large NH 3 yield rate of 20.05 μg h −1 mg cat.−1 and a high Faradaic efficiency of 11.93%, which are much higher than undoped TiO 2 . The mechanism of performance improvement is uncovered by density functional theory calculations.

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Section: Introductionmentioning

confidence: 99%

Modulating Oxygen Vacancies of TiO₂ Nanospheres by Mn-Doping to Boost Electrocatalytic N₂ Reduction

Chen

et al. 2021

ACS Sustainable Chem. Eng.

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“…4d displays two sets of doublets, first main peak centered at 53.74 eV binding energy and the other at 54.53 eV. Each doublet comprises two peaks due to the spin-orbit splitting of the Se 3d level, which are assigned to Se 3d 5/2 and Se 3d 3/2 of Zn-Se bonding 50 . The trend is similar for Zn(O,Se) layers deposited at 550 and 600 °C except minor shifts in binding energy, due to the formation of different solid solution of ZnSe(1-y)Oy and ZnO(1-z)Sez (see Supplementary Figs.…”

Section: Resultsmentioning

confidence: 99%

Pulsed laser deposition of Zn(O,Se) layers in nitrogen background Pressure

Abdalla

Bereznev

Spalatu

et al. 2019

Sci Rep

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Zinc oxy-selenide Zn(O,Se) is a novel material, that can replace the toxic CdS buffer layer in thin film solar cells and other optoelectronic devices. In this paper a systematic study of the structural, optical and electrical properties of Zn(O,Se) layers, grown by pulsed laser deposition under 50 mTorr of nitrogen background pressure, over a wide range of the substrate temperature, from RT to 600 °C, is reported. XRD, Raman, HR-SEM, XPS, UV-Vis techniques and Hall effect measurements have been used to investigate the structural, and optoelectronic properties of Zn(O,Se) layers. XRD analysis revealed that the polycrystalline ternary Zn(O,Se) phase formed at 500 °C. Raman analysis confirmed the formation of the polycrystalline Zn(O,Se) phase at 500 °C and an amorphous phase at substrate temperatures below 500 °C. Similarly, XPS analysis accompanied with the modified Auger parameters confirmed formation of ternary Zn(O,Se) layer at 500 °C as well. HR-SEM investigation showed the growth of homogenous, dense and adherent films onto a glass substrate. Furthermore, optical studies revealed that all prepared films are practically transparent in the visible region of the spectrum, with a band gap around 3 eV. Hall effect measurements revealed that conductivity, and electron concentration, increased by four orders of magnitude at 600 °C. It was found, that nitrogen background pressure maintained stable ratios of elemental contents in the whole range of the substrate temperature for Zn(O,Se) layers.

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“…Generally speaking, adding an appropriate amount of dopant can change the physical properties of a semiconductor film. The effects of sulfur (S), iron (Fe), chromium (Cr) [15], copper (Cu) [16], Ag [17], Mn [18], etc. have been systematically studied.…”

Section: Introductionmentioning

confidence: 99%

Influence of Precursor Temperature on Bi Doped ZnSe Material via Electrochemical Deposition Technique for Photovoltaic Application

Ikhioya

Danladi

Nnanyere

et al. 2022

J. Nig. Soc. Phys. Sci.

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In this study, Bismuth (Bi) doped ZnSe thin films were deposited on conducting glass substrates by electrochemical deposition technique and the influence of precursor temperature (room, 50, 55, 60 oC) on their optical and structural properties were systematically studied using the combined effect of X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrophotometer. The XRD patterns show a face-centred cubic structure indexed with peaks at (220), (221) and (300). The grain size was in the range of 3.24056 to 4.60481 nm with a lattice constant of 7.189Å. The material deposited at room, 500C, 550C, and 600C reveals agglomeration of particle on the surface of the substrate indicating uniform deposition. The optical spectra show that at different temperature (say room, 50oC, 55oC and 60oC), the absorbance and reflectance of BiZnSe thin films decreases with increase in wavelength of the incident radiation while the transmittance shows direct proportionality with the increase in wavelength. The bandgap demonstrated an increase in the range 1.75-2.25 eV with increase in temperature.

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Tunability in the Optical and Electronic Properties of ZnSe Microspheres via Ag and Mn Doping

Cited by 61 publications

References 29 publications

Modulating Oxygen Vacancies of TiO₂ Nanospheres by Mn-Doping to Boost Electrocatalytic N₂ Reduction

Modulating Oxygen Vacancies of TiO₂ Nanospheres by Mn-Doping to Boost Electrocatalytic N₂ Reduction

Pulsed laser deposition of Zn(O,Se) layers in nitrogen background Pressure

Influence of Precursor Temperature on Bi Doped ZnSe Material via Electrochemical Deposition Technique for Photovoltaic Application

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Tunability in the Optical and Electronic Properties of ZnSe Microspheres via Ag and Mn Doping

Cited by 61 publications

References 29 publications

Modulating Oxygen Vacancies of TiO2 Nanospheres by Mn-Doping to Boost Electrocatalytic N2 Reduction

Modulating Oxygen Vacancies of TiO2 Nanospheres by Mn-Doping to Boost Electrocatalytic N2 Reduction

Pulsed laser deposition of Zn(O,Se) layers in nitrogen background Pressure

Influence of Precursor Temperature on Bi Doped ZnSe Material via Electrochemical Deposition Technique for Photovoltaic Application

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Modulating Oxygen Vacancies of TiO₂ Nanospheres by Mn-Doping to Boost Electrocatalytic N₂ Reduction

Modulating Oxygen Vacancies of TiO₂ Nanospheres by Mn-Doping to Boost Electrocatalytic N₂ Reduction