Tunability of physical properties of (Cd:Zn)S thin film by Close Space Sublimation Process (CSSP)

Zakria, M.; Mahmood, Asif; Shah, Attaullah; Raza, Qaisar; Khan, Taj Muhammad; Ahmed, Ejaz

doi:10.1016/j.pnsc.2012.07.006

Cited by 27 publications

(9 citation statements)

References 15 publications

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“…It is observed that the refractive index n as well as extinction coefficient k decrease as the zinc concentration increases both before and after annealing. The decrease in refractive index n of the ternary alloy may also be due to the fact that the zinc ionic radius is smaller than that of cadmium; therefore the grain size as well as lattice constant are reduced [18]. Due to the reduction in grain size, crystallinity decreases which results in lowering the density of the alloy.…”

Section: Spectroscopic Ellipsometry (Se) Analysismentioning

confidence: 99%

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Ali

Iqbal

Mahmood

et al. 2016

Materials Science-Poland

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Cd 1−x Zn x Se (x = 0, 0.40 and 1) thin films were deposited on a glass substrate at room temperature by closed space sublimation method. Optical investigation has been performed using spectrophotometry and ellipsometry. It has been found that for as deposited films the optical band gap increased and the optical constants decreased with increasing Zn content. To improve the optical properties of Cd 1−x Zn x Se thin films annealing effect at 400°C was taken into consideration for various Zn contents. It was observed that the optical transmittance and band gap decreased while optical constants increased with increasing Zn content after annealing. The effects of composition and annealing on the optical dispersion parameters E o and E d were investigated using a single effective oscillator model. The calculated value of the average excitation energy E o obeys the empirical relation (E o = E g /2) obtained from the single oscillator model.

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Section: Spectroscopic Ellipsometry (Se) Analysismentioning

confidence: 99%

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Ali

Iqbal

Mahmood

et al. 2016

Materials Science-Poland

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“…The tuneability of physical properties owing to the incorporation of different Zn amounts in Cd 1−x Zn x S films has already been published in our previous paper [17]. Herein, the aim of this research article is to investigate the effect of post-annealing on structural and optical features by controlling the stoichiometric ratio of Cd:Zn and compare them to our previous as-deposited results.…”

Section: Introductionmentioning

confidence: 74%

Annealing-induced effects on structural and optical properties of Cd1−xZnxS thin films for optoelectronic applications

Zakria

Khan

Nasir

et al. 2015

Materials Science-Poland

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Cd 1−x Zn x S thin films of variable compositions (x = 0.2, 0.4, 0.6, 0.8) were deposited on glass at room temperature by thermal evaporation process. The prepared samples were annealed at two different temperatures (300°C, 400°C) for 1 hour in ambient air. The effects of post-annealing on the structural and optical characteristics were investigated using X-ray diffraction (XRD), spectrophotometry, and Raman spectroscopy (RS) methods. XRD studies suggested that the annealed and as-deposited samples belong to wurtzite structure for all Zn concentrations with a preferential orientation along (002) plane. Spectrophotometry analysis of the samples revealed that the energy band gap decreased with annealing temperature. RS investigated different phonon bands and crystalline phases. Two longitudinal optical phonon modes (1-LO, 2-LO) corresponding to monophase hexagonal structure were observed for all Cd 1−x Zn x S samples. The observed red-shift and anti-symmetrical nature of the 1-LO phonon mode can be associated with annealing, while the overall blue-shift, except for x 0.6, was caused by the structural disorders in periodic Cd atomic sub-lattices and broken translational symmetry. The spectroscopic results were strengthened by the XRD studies and their results are consistent.

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“…The linear nature of the graph at the absorption edge in the transmission spectra proves that films are semiconducting with a direct band gap. 36 It also shows that all samples show oscillatory behavior due to thin film interference. Pure ZnSe film shows the maximum intensity of transmission but it decreases drastically with the increase in Cu concentration.…”

Section: Spectrophotometerymentioning

confidence: 89%

“…Moreover, modeling of the optical parameters by the ellipsometer is an indirect characterization which requires large-scale approximation for the fitting of the model. 19,36 It is thus concluded that the band gap can be monitored more accurately by spectrophotometry. The E g values are well related to the previous reported values for Cu-doped ZnSe films.…”

Section: Spectrophotometerymentioning

confidence: 99%

Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

Arslan

Zakria

Naz

et al. 2015

Journal of Elec Materi

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Thin films of Cu x Zn 1Àx Se (0 £ x £ 0.20) have been prepared on glass substrates at room temperature by closed space sublimation. The effect of copper (Cu) concentration on the structural, optical and electrical properties of the prepared films has been investigated using x-ray diffraction (XRD), Raman spectroscopy (RS), spectrophotometery and Hall effect measurements. XRD spectra show that all the films are cubic with (111) preferred orientation. The lattice constants, crystallite size, strain, and dislocation density were calculated from the XRD spectra. The structural analysis shows that crystallite size and crystallinity increase while strain and dislocation density decrease up to 10% Cu addition. However, an opposite trend has been observed beyond 10% Cu concentration. RS was carried out to investigate different phonon bands and crystalline phases. The strong reflection corresponding to the (111) texture in the XRD and the observed longitudinal optical (LO) phonon bands at 251 cm À1 and 497 cm À1 in the Raman spectra reveal the formation of single phase zinc-blende structure. The band gap energy decreases from 2.67 eV to 2.24 eV as the Cu concentration is increased from 0% to 20%. Hall effect measurements shows that electrical resistivity (q) is decreased by about three orders of magnitude from 10.4 9 10 À03 X-cm to 47.9 9 10 À03 X-cm while, carrier concentration and mobility (l) is increased with Cu addition.

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Tunability of physical properties of (Cd:Zn)S thin film by Close Space Sublimation Process (CSSP)

Cited by 27 publications

References 15 publications

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Annealing-induced effects on structural and optical properties of Cd1−xZnxS thin films for optoelectronic applications

Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

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Tunability of physical properties of (Cd:Zn)S thin film by Close Space Sublimation Process (CSSP)

Cited by 27 publications

References 15 publications

Optical spectroscopic analysis of annealed Cd1−xZnxSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd1−xZnxSe thin films deposited by close space sublimation technique

Annealing-induced effects on structural and optical properties of Cd1−xZnxS thin films for optoelectronic applications

Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

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Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique