Tunable bandgap and wavelength range of zinc blende indium gallium nitride quantum dots

Three-Photon Excitation of InGaN Quantum Dots

“…Semiconductor quantum dots (QDs) formed from group-III nitrides are a promising platform to prove the presented selection rule. InGaN QDs are particularly attractive since their emission energy lies in the blue and green spectral region, a range well matched to commercially available ultrafast single-photon detectors and easily reachable in resonant multiphoton absorption experiments [29,30]. InGaN QDs have also well-developed epitaxial growth methods that permit the fabrication of pristine quantum systems that possess high brightness, fast radiative decay times and on-demand emission of single photons at elevated temperatures (200 K) [31][32][33][34].…”