Tunable bandgap opening in the proposed structure of silicon-doped graphene

Azadeh, M.S. Sharif; Kokabi, Alireza; Hosseini, Mahdi; Fardmanesh, Mehdi

doi:10.1049/mnl.2011.0195

Cited by 52 publications

(27 citation statements)

References 31 publications

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“…Impurity concentrations of 3 % reduce the conductivity to less than one-tenth of the pure graphene conductivity. These results suggest that silicon impurity is more effective at reducing the conductivity than the isotopic dopant; experiments have shown that the thermal conductivity of graphene isotopically enriched with 1.1 % of 13 C is reduced to 63 % of pure graphene [18]. Further, our results suggest that silicon impurity is superior to nitrogen doping, which has been observed to reduce the thermal conductivity to 30 % of pure graphene at of 3 % nitrogen impurity [16].…”

Section: Discussionsupporting

confidence: 55%

“…However, for practical applications, the zero bandgap of pristine graphene must be addressed with proper functionalization. The insertion of impurity or dopant atoms is the most effective method for addressing the bandgap concerns [10,13]. On the other hand, it can negatively impact thermal conduction properties.…”

Section: Introductionmentioning

confidence: 99%

“…The silicon-doped graphene has been recently synthesized [21], and density functional theory (DFT) calculation had shown the possibility of enhanced on/off efficiency [13]. It was proposed that bonding stability allows the addition of different atoms bound to Si atoms [22].…”

Section: Introductionmentioning

confidence: 99%

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Thermal conductivity reduction in graphene with silicon impurity

Lee

2015

Appl. Phys. A

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We present a molecular dynamics investigation on the thermal conductivity of silicon-doped graphene and the resulting change in phonon properties. A significant reduction in the thermal conductivity is observed in the presence of silicon impurity even at a small concentration of silicon atoms. Conductivity values continued to decrease with an increase in silicon concentration. The increase in the scattering rate, which is measured by the reduction or broadening of the peaks of the van Hove singularities, is the most significant factor contributing to the large conductivity reduction. An analysis with scattering time models shows that the mass displaced by the silicon impurity plays a significant role in reducing the conductivity, especially at a moderate concentration. The nonmass effect, which comes from the change of the sp 2 C-C bonds to the sp 3 Si-C bonds, is less strong or comparable with the mass change effect. For high impurity concentrations, the shape of the graphene is severely distorted and the irregularity of the ripples increases, which could contribute to the reduction in conductivity.

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Section: Discussionsupporting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

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Thermal conductivity reduction in graphene with silicon impurity

Lee

2015

Appl. Phys. A

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“…It is reported that the bandgap of N-functionalized graphene is almost 1.23 eV 85 and the nature of semiconductor is of n-type. However, maximum opening of bandgap can occur up to 2.01 eV depending upon the percentage of Si in graphene 86 and the structure is popularly known as siliphene.…”

Section: Please Do Not Adjust Marginsmentioning

confidence: 99%

Plasma modification of the electronic and magnetic properties of vertically aligned bi-/tri-layered graphene nanoflakes

et al. 2016

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Saturation magnetization (MS) of pristine bi-/tri-layered graphene (denoted as -FLG) is enhanced by over four (4) and thirty-four (34) times to 13.94 x 10 -4 and 118.62 x 10 -4 emu/gm, respectively, as compared to pristine FLGs (MS of 3.47 x 10 -4 emu/gm), via plasma-based-hydrogenation (known as Graphone) and nitrogenation (known as N-graphene) reactions, respectively. However, upon organo-silane treatment on FLG (known as Siliphene), the saturation magnetization is reduced by over thirty (30) times to 0.11 x 10 -4 emu/gm, as compared to pristine FLG. Synchroton based X-ray absorption near edge structure spectroscopy measurements have been carried out to investigate the electronic structure and the underlying mechanism responsible for the variation of magnetic properties. For graphone, the free spin available via the conversion of sp 2 sp 3 hybridized structure and the possibility of unpaired electrons from induced defects are the likely mechanism for ferromagnetic ordering. During nitrogenation, the Fermi level of FLGs is shifted upwards due to formation of graphitic like extra π-electron that makes the structure electron-rich, thereby, enhancing the magnetic coupling between magnetic moments. On the other hand, during the formation of siliphene, substitution of C-atom in FLG by Siatom occurs relaxes out the graphene plane to form Si-C tetrahedral sp 3 -bonding with non-magnetic atomic arrangement showing no spin polarization phenomena and thereby reducing the magnetization. Thus, plasma functionalization offers a simple yet facile route to control the magnetic properties of the graphene systems and has potential implications for spintronic applications.

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“…adsorption of hydrogen molecule [54], doping with silicon [55] and group IV element [56], adsorption of water molecule [57], and aromatic molecules [58]. In experiment, it has been demonstrated that a bandgap starting from 2.5 meV up to 450 meV can be introduced in…”

Section: Introductionmentioning

confidence: 99%

Advanced Graphene Microelectronic Devices

Al-Amin¹

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Tunable bandgap opening in the proposed structure of silicon-doped graphene

Cited by 52 publications

References 31 publications

Thermal conductivity reduction in graphene with silicon impurity

Thermal conductivity reduction in graphene with silicon impurity

Plasma modification of the electronic and magnetic properties of vertically aligned bi-/tri-layered graphene nanoflakes

Advanced Graphene Microelectronic Devices

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