“…The physics of semiconductor point defects is of outstanding importance for controlling their optical and electrical properties [1,2].The study of point defect properties is a field of much active interest due to recent discoveries of numerous magnetically and optically active defect centers that can act as a single photon source [3][4][5][6][7] or a quantum bit (qubit) [8][9][10]. So far, the most thoroughly investigated point defect for use in qubits are the NV-center in diamond [11][12][13][14][15][16], phosphor in silicon [17][18][19] and divacancy [20][21][22] in silicon carbide (SiC). Furthermore, numerous other centers in various semiconducting host materials are proposed as potential magneto-optical centers, such as silicon-vacancy and germanium-vacancy centers in diamond [23,24], silicon vacancy in SiC [25,26], carbon anti-site vacancy pair in SiC [27], Ce 3+ and Pr 3+ ions in yttrium aluminum garnet [5,28], Eu and Nd 3+ ion in yttrium orthosilicate [29,30], Nd 3+ yttrium orthovanadate [31], defect spins in aluminum nitride [32], etc.…”