Tunable Gain SnS2/InSe Van der Waals Heterostructure Photodetector

Abstract

Due to the favorable properties of two-dimensional materials such as SnS2, with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunable gain SnS2/InSe Van der Waals heterostructure photodetector. SnS2 crystals were synthesized by chemical vapor transport method and characterized using X-ray diffraction and Raman spectroscopy. The exfoliated SnS2 and InSe layers were transferred on the substrate. This photodetector presents photoresponsivity from 14 mA/W up to 740 mA/W and detectivity from 2.2 × 108 Jones up to 3.35 × 109 Jones by gate modulation from 0 V to +70 V. Light absorption and the charge carrier generation mechanism were studied by the Silvaco TCAD software and the results were confirmed by our experimental observations. The rather high responsivity and visible spectrum response makes the SnS2/InSe heterojunction a potential candidate for commercial visible image sensors.

High performance photodetectors based on In2S3, In2S1.5Se1.5 and In2Se3 nanostructures

“…The results show that the nanofibers exhibit a detectivity of 22.6 × 10 9 Jones. These detectivities are higher than those of other Se-based materials such as 2D layered Ta 2 NiSe 5 , 66 PdSe 2 flakes, 67 SnS 2 /InSe heterostructures, 68 ZrSe 3 69 and PANI/ZnO. 70 These findings suggest that 1D In 2 Se 3 holds promise as a material for utilization in photodetector devices.…”