Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers

Fan, Li; Fallahi, Mahmoud; Murray, James T.; Bedford, Robert; Kaneda, Yushi; Zakharian, Aramais R.; Hader, J.; Moloney, Jerome V.; Stolz, W.; Koch, S. W.

doi:10.1063/1.2164921

Cited by 69 publications

(34 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Along the way, many demonstrations concerned widely tunable [35][36][37][38] and narrow band lasers [39][40][41]. In terms of available output power, the 10 W level has been reached and exceeded using both single and multiple gain elements [29,30,42,43].…”

Section: Wavelength Coveragementioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

View full text Add to dashboard Cite

We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs-and GaSbbased gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180-1200 nm and subsequent intracavity frequency doubling to generate yelloworange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.

show abstract

Section: Wavelength Coveragementioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

View full text Add to dashboard Cite

show abstract

“…Moreover, the insertion of intracavity saturable absorber elements to external cavity enables VECSEL to achieve laser passive mode locking with picosecond and subpicosecond pulse generation. In this case, the length of the external short cavity allows control of the pulse repetition rates, with rates as high as 50GHz [29,30]. External cavity optics also allows different beam spot sizes on the gain and absorber elements required to achieve mode locking, which controls optical intensity of the beam spots [20,31].…”

Section: )mentioning

confidence: 99%

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

View full text Add to dashboard Cite

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).

show abstract

“…OP-VECSELs, also known as opticallypumped semiconductor disk lasers (OP-SDLs), provide a good quality, nearly diffraction limited beam, and output power much higher than a single-mode laser diodes (LDs). Moreover, the external cavity configuration enables the use of intra-cavity filters for wavelength tuning [5,6]. When compared with LDs, OPVECSELs are more advantageous also in terms of fabrication complexity; there is no need for doping associated with electrical injection [7].…”

Section: Introductionmentioning

confidence: 99%

GaSb-based heterostructures for high power and pulsed laser operation

Paajaste¹,

Suomalainen²,

Koskinen³

et al. 2010

Lithuanian J. Phys.

View full text Add to dashboard Cite

We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstrate GaSb-based optically pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) emitting multi-watt output power. A VECSEL gain structure comprising 15 In0.2Ga0.8Sb quantum wells grown on (100) n-doped GaSb substrate emitted continuous wave output power of over 4 W at 1970 nm wavelength operating near room temperature. Lasing was detected even at 50• C mount temperature. We also present a GaSb-based semiconductor saturable absorber mirror (SESAM) operating at 2 µm wavelength region. For the purpose of generating short laser pulses, the SESAM was carefully designed to attain a large modulation depth. The device was utilised successfully to passively Q-switch a 2 µm Tm 3+ -/Ho 3+ -doped fibre laser, demonstrating record-short Q-switch pulses of about 20 ns.

show abstract

Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers

Cited by 69 publications

References 13 publications

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

GaSb-based heterostructures for high power and pulsed laser operation

Contact Info

Product

Resources

About