the entire modulation process. Due to their unique electronic and optical characteristics, 2D and quasi-2D materials are emerging as exciting material systems for a new generation of layered optoelectronics, [11,12] such as photodetectors, [13,14] polarizers, [15] solar cells, [3,[16][17][18] and optical modulators. [19,20] For instance, graphene has many intriguing mechanical, electronic, thermal, and optical properties because the electrons behave as massless Dirac fermions and exhibit the highest mobility. [21,22] 2D transition-metal dichalcogenides (TMDs) change from indirect semiconductors to direct semiconductors when thinned to monolayers, showing remarkable optoelectronic properties. [23] The formation mechanism of traditional carrier layers is usually based on the high carrier mobility of 2D and quasi-2D materials. Although significant progress has been achieved through years of research, the preparation technology of new 2D materials, such as graphene and monolayer TMDs, is not mature and stable. To meet the demand for large-scale preparation of 2D materials with stable performance, improving the preparation technology, exploring new design mechanisms, or seeking other stable materials as candidates is urgent.Ferroelectrics are such stable materials with simple preparation methods. Additionally, the domains can be controlled via electric, thermal, optical, and mechanical fields, [24][25][26][27][28] meaning that the bound surface charges of ferroelectrics can be modulated under single-field or multifield coupling. Inspired by the PN heterojunction effect, in which the generation of current carriers in the space charge region can be extremely high, [29][30][31][32][33][34][35] combining ferroelectrics and semiconductors with high carrier mobility to construct PN heterojunctions may be an effective way to form a carrier layer and achieve carrier modulation.To demonstrate this concept, N-type silicon with a bandgap of 1.12 eV is chosen as the semiconductor material, which can guarantee sufficient free electrons under optical field. Ferroelectrics usually have a Curie temperature T 0 above which they are in a paraelectric phase state. Due to its good dielectric performance with significant dielectric nonlinearity over a wide temperature range near T 0 , Ba 0.7 Sr 0.3 TiO 3 (BST) thin film is chosen as the ferroelectric material. By depositing the BST thin film directly onto a silicon substrate, the BST-silicon PN heterojunction is constructed, deriving from the interaction between