Tunable inductors using vanadium dioxide as the control material

Wang, Shu; Wang, Weisong; Shin, Eunsung; Quach, T.; Subramanyam, Guru

doi:10.1002/mop.30459

Cited by 12 publications

(39 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Lastly, a layer of photoresist is used to cover the VO 2 thin film to prevent oxidation with only probing regions exposed. The details of fabrication process can also be found in our previous publication [9]. The devices were measured using an HP 8720 Vector Network Analyzer and a thermoelectric temperature controller with a frequency sweep from 0.01 GHz to 10 GHz.…”

Section: Tunable Inductor Designsmentioning

confidence: 99%

“…This paper highlights the latest results of a continuous effort in tunable inductor research [9]. In this study, VO 2 thin films were fabricated on a sapphire substrate.…”

Section: Introductionmentioning

confidence: 99%

“…In this study, VO 2 thin films were fabricated on a sapphire substrate. The VO 2 thin film is one of the insulator-to-metal (ITM) phase transition materials at a transition temperature of 68 ∘ C with excellent electrical properties, which is utilized as a switch in the circuit [9]. These tunable inductors are thermally controlled to accomplish variable inductance [9].…”

Section: Introductionmentioning

confidence: 99%

“…The VO 2 thin film is one of the insulator-to-metal (ITM) phase transition materials at a transition temperature of 68 ∘ C with excellent electrical properties, which is utilized as a switch in the circuit [9]. These tunable inductors are thermally controlled to accomplish variable inductance [9]. Due to a large change in electrical resistance, as well as electromagnetic properties, VO 2 thin films are attractive for a wide variety of applications from RF switches to tunable antennas [9][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…These tunable inductors are thermally controlled to accomplish variable inductance [9]. Due to a large change in electrical resistance, as well as electromagnetic properties, VO 2 thin films are attractive for a wide variety of applications from RF switches to tunable antennas [9][10][11][12][13][14][15][16][17][18][19]. The VO 2 thin films also have memristive properties, which can be demonstrated as an adaptive ("learning") filter by using a VO 2 based memristor [20].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Tunable Inductors Using Integrated Vanadium Dioxide Phase Change Thin Films

Wang

Shin

et al. 2018

Advances in Condensed Matter Physics

Self Cite

View full text Add to dashboard Cite

This paper presents tunable inductors designed with vanadium dioxide (VO 2 ) thin film to implement tunability. Two types of configurations, a single line coil inductor and a dual line coil inductor, are proposed. Tunable inductance is realized by thermally controlling VO 2 thin film stub to be an insulator or a conductor. The measurements of inductors are taken in the frequencies range from 0.01 GHz to 10 GHz. The electrical model has been developed to derive the corresponding inductance. The results show that the tuning range is about 69% when the temperature changes from room temperature to above the critical temperature of 68 ∘ C.

show abstract

Section: Tunable Inductor Designsmentioning

confidence: 99%

“…This paper highlights the latest results of a continuous effort in tunable inductor research [9]. In this study, VO 2 thin films were fabricated on a sapphire substrate.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Tunable Inductors Using Integrated Vanadium Dioxide Phase Change Thin Films

Wang

Shin

et al. 2018

Advances in Condensed Matter Physics

Self Cite

View full text Add to dashboard Cite

show abstract

Radio-Frequency Characteristics of Ge-Doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Müller

Khadar

Abel

et al. 2020

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

This work investigates and reports on the radio-frequency (rf) behavior in the frequency range of 5–35 GHz of germanium-doped vanadium dioxide (Ge-doped VO2) thin films deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) with estimated Ge concentrations of 5 and 5.5%. Both films exhibit critical transition temperatures (T c) of 76.2 and 72 °C, respectively, which are higher compared to that of the undoped VO2 which undergoes reversible insulator-to-metal phase transition at 68 °C. Both types of Ge-doped films show low hysteresis (<5 °C) in their conductivity versus temperature characteristics and preserve high off-state dc-conductivities (corresponding to the insulating state of the phase change material) of 13 S/m for the sputtered and 55 S/m for the PLD-deposited film, respectively. The dc on-state (corresponding to the conductive state of the phase change material) conductivity reaches 145,000 S/m in the case of the PLD film, which represents a significant increase compared to the state-of-the art values measured for undoped VO2 thin films deposited on identical substrates. In order to further understand the off-state dissimilarities and rf behavior of the deposited Ge-doped VO2 films, we propose an original methodology for the experimental extraction of the dielectric constant (εr) in the GHz range of the films below 60 °C. This is achieved by exploiting the frequency shift of resonant filters. For this purpose, we have fabricated coplanar waveguide structures incorporating ultracompact Peano space-filling curves, each resonating at a different frequency between 5 and 35 GHz on two types of substrates, one with the Ge-doped VO2 thin films and another one using only SiO2 to serve as the reference. The reported results and analysis contribute to the advancement of the field of metal–insulator–transition-material technology with high T c for rf industrial applications.

show abstract

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Müller

Moldoveanu

Asavei

et al. 2019

Sci Rep

View full text Add to dashboard Cite

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, terahertz and optoelectronic devices. Employing radiofrequency (RF) electronic circuits with a MIT material like vanadium Dioxide, VO2, requires appropriate characterization tools and fabrication processes. In this work, we develop and use 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting using MIT materials. The novel foundation of a 3D Smith chart involves here the geometrical fundamental notions of oriented curvature and variable homothety in order to clarify first theoretical inconsistencies in Foster and Non Foster circuits, where the driving point impedances exhibit mixed clockwise and counter-clockwise frequency dependent (oriented) paths on the Smith chart as frequency increases. We show here the unique visualization capability of a 3D Smith chart, which allows to quantify orientation over variable frequency. The new 3D Smith chart is applied as a joint complex-scalar 3D multi-parameter modelling and characterization environment for reconfigurable RF design exploiting Metal-Insulator-Transition (MIT) materials. We report fabricated inductors with record quality factors using VO2 phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.

show abstract

Tunable inductors using vanadium dioxide as the control material

Cited by 12 publications

References 14 publications

Tunable Inductors Using Integrated Vanadium Dioxide Phase Change Thin Films

Tunable Inductors Using Integrated Vanadium Dioxide Phase Change Thin Films

Radio-Frequency Characteristics of Ge-Doped Vanadium Dioxide Thin Films with Increased Transition Temperature

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Contact Info

Product

Resources

About