2021
DOI: 10.1021/acsami.1c03667
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Tunable Infrared Plasmonic Properties of Epitaxial Ti1–xMgxN(001) Layers

Abstract: Optical transmission and reflection spectra in combination with ellipsometry and transport measurements on epitaxial rocksalt structure Ti1–x Mg x N­(001) layers with 0.00 ≤ x ≤ 0.49 are employed to explore their potential as refractory infrared plasmonic materials. A red shift in the reflection edge ℏωe from 2.0 to 0.8 eV and the corresponding unscreened plasma energy ℏωpu from 7.6 to 4.7 eV indicate a linear reduction in the free carrier density N with increasing x. However, nitrogen vacancies in Mg-rich sam… Show more

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Cited by 9 publications
(6 citation statements)
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“…In the XPS data of TiN (Figure c), the signals at ∼455 and ∼458 eV can be assigned to the 2p 3/2 states of Ti 3+ and Ti 4+ , respectively, and the intermediate one at 456.5 eV is ascribed to the shake signal of the Ti 3+ 2p 3/2 state, while the two broad signals above 460 eV arise from the 2p 1/2 states of Ti 3+ and Ti 4+ (the shake signal for the Ti 3+ 2p 1/2 state was not included for deconvolution due to the low resolution). These signal positions and the intensity ratios of the Ti 2p 3/2 and Ti 2p 1/2 peaks are essentially consistent with those reported in the NIST XPS Database and some literature studies. ,, Referring to the Ti 2p signal deconvolution, we performed peak deconvolution for the Ti 2p signals in the Ti 1– x Mg x N ( x = 0.48) sample. As shown in Figure b, three signals below 460 eV can be obtained from the fitting at ∼455, ∼456, and ∼457.5 eV, which are mainly attributed to the Ti 3+ 2p 3/2 and its shake signals Ti 3+ as well as the Ti 4+ 2p 3/2 signal, respectively.…”
Section: Resultssupporting
confidence: 86%
See 1 more Smart Citation
“…In the XPS data of TiN (Figure c), the signals at ∼455 and ∼458 eV can be assigned to the 2p 3/2 states of Ti 3+ and Ti 4+ , respectively, and the intermediate one at 456.5 eV is ascribed to the shake signal of the Ti 3+ 2p 3/2 state, while the two broad signals above 460 eV arise from the 2p 1/2 states of Ti 3+ and Ti 4+ (the shake signal for the Ti 3+ 2p 1/2 state was not included for deconvolution due to the low resolution). These signal positions and the intensity ratios of the Ti 2p 3/2 and Ti 2p 1/2 peaks are essentially consistent with those reported in the NIST XPS Database and some literature studies. ,, Referring to the Ti 2p signal deconvolution, we performed peak deconvolution for the Ti 2p signals in the Ti 1– x Mg x N ( x = 0.48) sample. As shown in Figure b, three signals below 460 eV can be obtained from the fitting at ∼455, ∼456, and ∼457.5 eV, which are mainly attributed to the Ti 3+ 2p 3/2 and its shake signals Ti 3+ as well as the Ti 4+ 2p 3/2 signal, respectively.…”
Section: Resultssupporting
confidence: 86%
“…For instance, the group IV TM element Ti has +3 valence state in nitride TiN, then the Ti 3+ ions could be moved into a higher oxidation state by introducing Mg 2+ ions . The alloying TiN by Mg addition (Ti 1– x Mg x N) has been extensively employed to tune the optical properties and improve the coating stability and corrosion resistance as compared to TiN. , Tunable infrared plasmonic properties have also been reported for Ti 1– x Mg x N films. Increasing Mg loading in TiN can induce metal-to-semiconductor transition on Ti 0.5 Mg 0.5 N composition, adopting an ordered rocksalt-derived structure, which was further confirmed by the first-principles theoretical calculations . Further introducing Al by alloying Ti 0.5 Mg 0.5 N with AlN can improve the lattice mismatch of Ti 0.5 Mg 0.5 N with MgO substrates, tailor the strain, and therefore modulate the band gap …”
Section: Introductionmentioning
confidence: 99%
“…Another paper from the same group reported an ∼100× increase in electrical resistivity from ∼10 to ∼3200 μOhm cm with measured optical absorption minima in the 1.7–2.0 eV range for (Mg x Ti 1– x )­N solid solutions, suggesting an extrapolated band gap of 0.7–1.7 eV for semiconducting Ti 0.5 Mg 0.5 N . These experimental reports followed a computational prediction of thermodynamic stability, crystal structure, and electronic properties of Mg TM N 2 ( TM = Ti, Zr, Hf) compounds. , Phase transformations and plasmonic properties of the (Mg x Ti 1– x )N alloys have also been reported. Until recently, TM s in the highest oxidation stated had not been incorporated in Mg– TM –N compounds, but MgMoN 2 with a lowered Mo (+IV) oxidation state has been synthesized in bulk form. , In addition, solid state syntheses of MgTa 2 N 3 and Mg 2 Ta 2 N 4 have been reported and studied for Mg deintercalation, which has a reduced Ta valence state compared to Ta (+V) in a charge-balanced Mg 2 TaN 3 composition.…”
Section: Experimental Synthesismentioning
confidence: 56%
“…65 The Ti 1−x Mg x N epilayers have been examined as a plasmonic material, and the unscreened plasma energy was tuned from 7.6 to 4.7 eV by increasing x from 0 to 0.49. 64 As described above, II−IV−N 2 and derived nitrides exhibit a variety of optoelectronic properties. The study of ternary and quaternary functional nitrides is promising.…”
Section: Resultsmentioning
confidence: 95%
“…1 This suggests that if the growth conditions are optimized, a single-phase rs-MgSnN 2 could be epitaxially grown on GaN(001). Ti 1−x Mg x N with a rocksalt structure is a TiN-based nitride, which can be epitaxially grown on MgO(001) 63,64 and c-Al 2 O 3 . 65 The Ti 1−x Mg x N epilayers have been examined as a plasmonic material, and the unscreened plasma energy was tuned from 7.6 to 4.7 eV by increasing x from 0 to 0.49.…”
Section: Resultsmentioning
confidence: 99%